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题名: Semi-insulating GaAs grown in outer space
作者: Chen NF;  Zhong XR;  Lin LY;  Xie X;  Zhang M
出版日期: 2000
会议日期: JUN 13-18, 1999
摘要: A semi-insulating GaAs single crystal ingot was grown in a recoverable satellite, within a specially designed pyrolytic boron nitride crucible, in a power-traveling furnace under microgravity. The characteristics of a compound semiconductor single crystal depends fundamentally on its stoichiometry, i.e. the ration of two types of atoms in the crystal. a practical technique for nondestructive and quantitative measuring stoichiometry in GaAs single crystal was used to analyze the space-grown GaAs single crystal. The distribution of stoichiometry in a GaAs wafer was measured for the first time. The electrical, optical and structural properties of the space-grown GaAs crystal were studied systematically, Device fabricating experiments prove that the quality of field effect transistors fabricated from direct ion-implantation in semi-insulating GaAs wafers has a close correlation with the crystal's stoichiometry. (C) 2000 Elsevier Science S.A. All rights reserved.
会议名称: IUMRS International Conference of Advanced Materials
KOS主题词: Gallium arsenide;  Space;  Interplanetary space;  Reduced gravity environments;  Defects;  Stoichiometry;  Segregation;  Separation;  Carbon;  Bore;  Bore
会议文集: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 75 (2-3)
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Chen NF; Zhong XR; Lin LY; Xie X; Zhang M .Semi-insulating GaAs grown in outer space .见:ELSEVIER SCIENCE SA .MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 75 (2-3),PO BOX 564, 1001 LAUSANNE, SWITZERLAND ,2000,134-138
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