High-quality GaN grown by gas-source MBE

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	High-quality GaN grown by gas-source MBE
	Wang JX; Sun DZ; Wang XL; Li JM; Zeng YP; Hou X; Lin LY; Wang JX Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
	2001
Conference Name	11th International Conference on Molecular Beam Epitaxy (MBE-XI)
Source Publication	JOURNAL OF CRYSTAL GROWTH, 227
Pages	386-389
Conference Date	SEP 11-15, 2000
Conference Place	BEIJING, PEOPLES R CHINA
Publication Place	PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
Publisher	ELSEVIER SCIENCE BV
ISSN	0022-0248
metadata_83	chinese acad sci, inst semicond, beijing 100083, peoples r china; chinese acad sci, xian inst opt & precis mech, xian 710068, peoples r china
Abstract	High-quality GaN epilayers were consistently obtained using a home-made gas-sourer MBE system on sapphire substrates. Room-temperature electron mobility of the grown GaN film is 300 cm(2)/V s with a background electron concentration as low as 2 x 10(17) cm(-3) The full-width at half-maximum of the GaN (0 0 0 2) double-crystal X-ray rocking curve is 6 arcmin. At low temperature (3.5 K), the FWHM of the: near-band-edge photoluminescence emission line is 10 meV. Furthermore, using piezoelectric effect alone with the high-quality films, two-dimensional electron gas was formed in a GaN/AlN/GaN/sapphire structure. Its room-temperature and low-temperature (77 K) electron mobility is 680 cm(2)/V s and 1700 cm(2)/V s, and the corresponding sheet electron density is 3.2 x 10(13) and 2.6 x 10(13) cm(-2), respectively. (C) 2001 Published by Elsevier Science.
Keyword	Characterization Molecular Beam Epitaxy Gallium Compounds Nitrides Piezoelectric Materials Semiconducting Gallium Compounds Molecular-beam Epitaxy Heterostructures Sapphire Diodes
Subject Area	半导体材料
Funding Organization	China Natl Nat Sci Fdn.; Inst Semiconductor, CAS.; Inst Phys, CAS.; State Key Lab Funct Mat Informat.; Inst Met, CAS.; Hong Kong Univ Sci & Technol.; Univ Hong Kong, Lab New Mat.; Chinese Acad Sci, Lab New Mat.; VG Semicon.; Riber.
Indexed By	CPCI-S
Language	英语
Document Type	会议论文
Identifier	http://ir.semi.ac.cn/handle/172111/14937
Collection	中国科学院半导体研究所（2009年前）
Corresponding Author	Wang JX Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Recommended Citation GB/T 7714	Wang JX,Sun DZ,Wang XL,et al. High-quality GaN grown by gas-source MBE[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,2001:386-389.

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