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题名: High-quality GaN grown by gas-source MBE
作者: Wang JX;  Sun DZ;  Wang XL;  Li JM;  Zeng YP;  Hou X;  Lin LY
出版日期: 2001
会议日期: SEP 11-15, 2000
摘要: High-quality GaN epilayers were consistently obtained using a home-made gas-sourer MBE system on sapphire substrates. Room-temperature electron mobility of the grown GaN film is 300 cm(2)/V s with a background electron concentration as low as 2 x 10(17) cm(-3) The full-width at half-maximum of the GaN (0 0 0 2) double-crystal X-ray rocking curve is 6 arcmin. At low temperature (3.5 K), the FWHM of the: near-band-edge photoluminescence emission line is 10 meV. Furthermore, using piezoelectric effect alone with the high-quality films, two-dimensional electron gas was formed in a GaN/AlN/GaN/sapphire structure. Its room-temperature and low-temperature (77 K) electron mobility is 680 cm(2)/V s and 1700 cm(2)/V s, and the corresponding sheet electron density is 3.2 x 10(13) and 2.6 x 10(13) cm(-2), respectively. (C) 2001 Published by Elsevier Science.
会议名称: 11th International Conference on Molecular Beam Epitaxy (MBE-XI)
KOS主题词: characterization;  atomic layer deposition;  Gallium compounds;  Nitrides;  Piezoelectric materials;  atomic layer deposition;  Heterostructures;  Aluminum oxide;  Diodes
会议文集: JOURNAL OF CRYSTAL GROWTH, 227
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Wang JX; Sun DZ; Wang XL; Li JM; Zeng YP; Hou X; Lin LY .High-quality GaN grown by gas-source MBE .见:ELSEVIER SCIENCE BV .JOURNAL OF CRYSTAL GROWTH, 227,PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS ,2001,386-389
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