Symmetry in the diagonal self-assembled InAs quantum wire arrays on InP substrate
Wu J; Zeng YP; Cui LJ; Zhu ZP; Wang BX; Wang ZG; Wu J Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci Beijing 100083 Peoples R China.
2002
会议名称Symposium on Advance Characterization of Electronic Materials held at the 8th IUMRS International Conference on Electronic Materials (IUMRS-ICEM2002)
会议录名称INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (28-29)
页码4423-4426
会议日期JUN 10-14, 2002
会议地点XIAN, PEOPLES R CHINA
出版地JOURNAL DEPT PO BOX 128 FARRER ROAD, SINGAPORE 912805, SINGAPORE
出版者WORLD SCIENTIFIC PUBL CO PTE LTD
ISSN0217-9792
部门归属chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china; chinese acad sci, inst semicond, ctr semicond mat, beijing 100083, peoples r china
摘要Diagonal self-assembled InAs quantum wire (QWR) arrays with the stacked InAs/In0.52Al0.48As structure are grown on InP substrates, which are (001)-oriented and misoriented by 6degrees towards the [100] direction. Both the molecular beam epitaxy (MBE) and migration enhanced epitaxy (MEE) techniques are employed. Transmission electron microscopy reveals that whether a diagonal InAs QWR array of the stacked InAs/InAlAs is symmetrical about the growth direction or not depends on the growth method as well as substrate orientation. Asymmetry in the diagonal MEE-grown InAs QWR array can be ascribed to the influence of surface reconstruction on upward migration of adatoms during the self-assembly of the InAs quantum wires.
关键词Inp(001) Epitaxy Gaas
学科领域半导体材料
主办者Chinese Mat Res Soc.; Minist Sci & Technol China.; Natl Nat Sci Fdn China.; Chinese Acad Sci.; Chinese Acad Engn.; Gove Shaanxi Province & Xian City.; China Electr Mat Assoc.; China Assoc Sci & Technol.
收录类别CPCI-S
语种英语
文献类型会议论文
条目标识符http://ir.semi.ac.cn/handle/172111/14879
专题中国科学院半导体研究所(2009年前)
通讯作者Wu J Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci Beijing 100083 Peoples R China.
推荐引用方式
GB/T 7714
Wu J,Zeng YP,Cui LJ,et al. Symmetry in the diagonal self-assembled InAs quantum wire arrays on InP substrate[C]. JOURNAL DEPT PO BOX 128 FARRER ROAD, SINGAPORE 912805, SINGAPORE:WORLD SCIENTIFIC PUBL CO PTE LTD,2002:4423-4426.
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