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题名: Symmetry in the diagonal self-assembled InAs quantum wire arrays on InP substrate
作者: Wu J;  Zeng YP;  Cui LJ;  Zhu ZP;  Wang BX;  Wang ZG
出版日期: 2002
会议日期: JUN 10-14, 2002
摘要: Diagonal self-assembled InAs quantum wire (QWR) arrays with the stacked InAs/In0.52Al0.48As structure are grown on InP substrates, which are (001)-oriented and misoriented by 6degrees towards the [100] direction. Both the molecular beam epitaxy (MBE) and migration enhanced epitaxy (MEE) techniques are employed. Transmission electron microscopy reveals that whether a diagonal InAs QWR array of the stacked InAs/InAlAs is symmetrical about the growth direction or not depends on the growth method as well as substrate orientation. Asymmetry in the diagonal MEE-grown InAs QWR array can be ascribed to the influence of surface reconstruction on upward migration of adatoms during the self-assembly of the InAs quantum wires.
会议名称: Symposium on Advance Characterization of Electronic Materials held at the 8th IUMRS International Conference on Electronic Materials (IUMRS-ICEM2002)
KOS主题词: Epitaxy;  Gallium arsenide
会议文集: INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (28-29)
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Wu J; Zeng YP; Cui LJ; Zhu ZP; Wang BX; Wang ZG .Symmetry in the diagonal self-assembled InAs quantum wire arrays on InP substrate .见:WORLD SCIENTIFIC PUBL CO PTE LTD .INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (28-29),JOURNAL DEPT PO BOX 128 FARRER ROAD, SINGAPORE 912805, SINGAPORE ,2002,4423-4426
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