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题名: Dislocations in InAs epilayers grown by MBE on GaAs substrates under various conditions
作者: Wang HM;  Zeng YP;  Pan L;  Zhou HW;  Zhu ZP;  Kong MY
出版日期: 1998
会议日期: APR 15-16, 1998
摘要: Using Transmission Electron Microscopy, we studied the misfit and threading dislocations in InAs epilayers. All the samples, with thickness around 0.5 mu m, were grown on GaAs(001) substrates by molecular beam epitaxy under As-rich or in-rich conditions. The As-rich growth undergoes 2D-3D mode transition process, which was inhibited under In-rich surface. High step formation energy under As-deficient reconstruction inhibits the formation of 3D islands and leads to 2D growth. The mechanism of misfit dislocations formation was different under different growth condition which caused the variation of threading dislocation density in the epilayers.
会议名称: Symposium on Electron Microscopy of Semiconducting Materials and ULSI Devices at the Spring Materials-Research-Society Meeting
会议文集: ELECTRON MICROSCOPY OF SEMICONDUCTING MATERIALS AND ULSI DEVICES, 523
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Wang HM; Zeng YP; Pan L; Zhou HW; Zhu ZP; Kong MY .Dislocations in InAs epilayers grown by MBE on GaAs substrates under various conditions .见:MATERIALS RESEARCH SOCIETY .ELECTRON MICROSCOPY OF SEMICONDUCTING MATERIALS AND ULSI DEVICES, 523,506 KEYSTONE DRIVE, WARRENDALE, PA 15088-7563 USA ,1998,231-234
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