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题名: Research on nitrogen implantation energy dependence of the properties of SIMON materials
作者: Zhang EX;  Sun JY;  Chen J;  Chen M;  Zhang ZX;  Li N;  Zhang GQ;  Wang X
出版日期: 2006
会议日期: SEP 05-10, 2004
摘要: With different implantation energies, nitrogen ions were implanted into SIMOX wafers in our work. And then the wafers were subsequently annealed to form separated by implantation of oxygen and nitrogen (SIMON) wafers. Secondary ion mass spectroscopy (SIMS) was used to observe the distribution of nitrogen and oxygen in the wafers. The result of electron paramagnetic resonance (EPR) was suggested by the dandling bonds densities in the wafers changed with N ions implantation energies. SIMON-based SIS capacitors were made. The results of the C-V test confirmed that the energy of nitrogen implantation affects the properties of the wafers, and the optimum implantation energy was determined. (c) 2005 Elsevier B.V. All rights reserved.
会议名称: 14th International Conference on Ion Beam Modification of Materials (IBMM 2004)
KOS主题词: Nitrogen
会议文集: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Zhang, EX; Sun, JY; Chen, J; Chen, M; Zhang, ZX; Li, N; Zhang, GQ; Wang, X .Research on nitrogen implantation energy dependence of the properties of SIMON materials .见:ELSEVIER SCIENCE BV .NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS ,JAN 2006,242 (1-2): 585-587
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