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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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中科院半导体材料科学... [1]
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一种生长富In组分非极性A面InGaN薄膜的方法
专利
专利类型: 发明, 公开日期: 2012-12-12
Inventors:
赵桂娟
;
李志伟
;
桑玲
;
刘贵鹏
;
刘长波
;
谷承艳
;
魏鸿源
;
刘祥林
;
朱勤生
;
杨少延
;
王占国
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Submit date：2014/10/29
