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中国科学院半导体研究所机构知识库
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“W”型锑化物二类量子阱的外延生长方法
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专利类型: 发明, 专利号: CN102157903A, 公开日期: 2012-09-09, 2012-09-09, 2012-09-09
Inventors:
迂修
;
张宇
;
王国伟
;
徐应强
;
徐云
;
宋国峰
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Submit date：2012/09/09
