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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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纳米光电子实验室 [2]
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2011 [1]
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中文 [1]
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3-4 μm 锑化物“W”型二类量子阱激光器的研究
学位论文
, 北京: 中国科学院研究生院, 2011
Authors:
迂修
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View/Download：1129/79
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Submit date：2011/06/03
“W”型锑化物二类量子阱的外延生长方法
专利
专利类型: 发明, 专利号: CN102157903A, 公开日期: 2012-09-09, 2012-09-09, 2012-09-09
Inventors:
迂修
;
张宇
;
王国伟
;
徐应强
;
徐云
;
宋国峰
Adobe PDF(227Kb)
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Submit date：2012/09/09
