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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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中国科学院半导体研究... [6]
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一种在砷化镓衬底上外延生长锑化镓的方法
专利
专利类型: 发明, 申请日期: 2008-06-25, 公开日期: 2009-06-04, 2009-06-11
Inventors:
郝瑞亭
;
周志强
;
任正伟
;
徐应强
;
牛智川
Adobe PDF(621Kb)
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View/Download:1773/190
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Submit date:2009/06/11
一种在砷化镓衬底上外延生长锑化镓的方法
专利
专利类型: 发明, 申请日期: 2008-03-26, 公开日期: 2009-06-04, 2009-06-11
Inventors:
郝瑞亭
;
周志强
;
任正伟
;
徐应强
;
牛智川
Adobe PDF(752Kb)
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View/Download:1804/150
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Submit date:2009/06/11
一种在砷化镓衬底上外延生长锑化镓的方法
专利
专利类型: 发明, 申请日期: 2008-03-26, 公开日期: 2009-06-04, 2009-06-11
Inventors:
郝瑞亭
;
周志强
;
任正伟
;
徐应强
;
牛智川
Adobe PDF(753Kb)
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View/Download:1738/168
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Submit date:2009/06/11
无权访问的条目
期刊论文
Authors:
孙彦
;
彭红玲
;
任正伟
;
贺振宏
Adobe PDF(386Kb)
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View/Download:1031/340
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Submit date:2010/11/23
无权访问的条目
期刊论文
Authors:
NIU Zhihong
;
REN Zhengwei
;
HE Zhenhong
Adobe PDF(641Kb)
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View/Download:808/318
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Submit date:2010/11/23
无权访问的条目
期刊论文
Authors:
牛智红
;
任正伟
;
贺振宏
Adobe PDF(430Kb)
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View/Download:1290/411
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Submit date:2010/11/23