Knowledge Management System Of Institute of Semiconductors,CAS
| 一种在砷化镓衬底上外延生长锑化镓的方法 | |
郝瑞亭; 周志强; 任正伟; 徐应强 ; 牛智川
| |
| 2008-06-25 | |
| Date Available | 2009-06-04 ; 2009-06-11 |
| Subtype | 发明 |
| Application Date | 2006-12-21 |
| Language | 中文 |
| Application Number | CN200610165547.2 |
| Document Type | 专利 |
| Identifier | http://ir.semi.ac.cn/handle/172111/4171 |
| Collection | 中国科学院半导体研究所（2009年前） |
| Recommended Citation GB/T 7714 | 郝瑞亭,周志强,任正伟,等. 一种在砷化镓衬底上外延生长锑化镓的方法[P]. 2008-06-25. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| CN200610165547.2.pdf（621KB） | 限制开放 | -- | Application Full Text | |||
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