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双电容金属氧化物半导体硅基高速高调制效率电光调制器 专利
专利类型: 发明, 申请日期: 2008-03-05, 公开日期: 2009-06-04, 2009-06-11
Inventors:  陈弘达;  黄北举;  刘海军;  顾明
Adobe PDF(634Kb)  |  Favorite  |  View/Download:1177/151  |  Submit date:2009/06/11
三电容MOS硅基高速高调制效率电光调制器 专利
专利类型: 发明, 申请日期: 2008-03-05, 公开日期: 2009-06-04, 2009-06-11
Inventors:  陈弘达;  黄北举;  刘金彬;  顾明;  刘海军
Adobe PDF(577Kb)  |  Favorite  |  View/Download:1335/220  |  Submit date:2009/06/11