SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
双电容金属氧化物半导体硅基高速高调制效率电光调制器
陈弘达; 黄北举; 刘海军; 顾明
2008-03-05
Date Available2009-06-04 ; 2009-06-11
Subtype发明
Application Date2006-08-30
Language中文
Application Number200610112702
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/3973
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
陈弘达,黄北举,刘海军,等. 双电容金属氧化物半导体硅基高速高调制效率电光调制器[P]. 2008-03-05.
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