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双电容金属氧化物半导体硅基高速高调制效率电光调制器 专利
专利类型: 发明, 申请日期: 2008-03-05, 公开日期: 2009-06-04, 2009-06-11
Inventors:  陈弘达;  黄北举;  刘海军;  顾明
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三电容MOS硅基高速高调制效率电光调制器 专利
专利类型: 发明, 申请日期: 2008-03-05, 公开日期: 2009-06-04, 2009-06-11
Inventors:  陈弘达;  黄北举;  刘金彬;  顾明;  刘海军
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CMOS硅发光二极管驱动电路 专利
专利类型: 发明, 申请日期: 2007-09-12, 公开日期: 2009-06-04, 2009-06-11
Inventors:  陈弘达;  刘海军;  黄北举
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采用标准CMOS工艺制作的叉指型结构硅发光二极管 专利
专利类型: 发明, 申请日期: 2007-09-12, 公开日期: 2009-06-04, 2009-06-11
Inventors:  陈弘达;  刘海军;  黄北举
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多层金属间氧化物脊形波导结构及其制作方法 专利
专利类型: 发明, 申请日期: 2007-09-12, 公开日期: 2009-06-04, 2009-06-11
Inventors:  陈弘达;  黄北举;  顾明;  刘海军
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用标准工艺制作金属间氧化层光波导的方法 专利
专利类型: 发明, 申请日期: 2007-05-23, 公开日期: 2009-06-04, 2009-06-11
Inventors:  陈弘达;  顾明;  刘海军
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与标准集成电路工艺兼容的硅基DBR激光器及其工艺 专利
专利类型: 发明, 申请日期: 2007-04-04, 公开日期: 2009-06-04, 2009-06-11
Inventors:  陈弘达;  刘海军;  高鹏;  顾明
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深亚微米CMOS工艺电感补偿型光电探测器及制作方法 专利
专利类型: 发明, 申请日期: 2007-03-28, 公开日期: 2009-06-04, 2009-06-11
Inventors:  陈弘达;  高鹏;  顾明;  刘海军
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A low power integrated CMOS transmitter for BCI system 会议论文
2007 International Workshop on Electron Devices and Semiconductor Technology, Beijing, PEOPLES R CHINA, JUN 03-04, 2007
Authors:  Zhang X (Zhang Xu);  Liu HJ (Liu Haijun);  Liu JB (Liu Jinbin);  Huang BJ (Huang Beiju);  Zhu L (Zhu Lin);  Gu M (Gu Ming);  Chen HD (Chen Hongda);  Zhang, X, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
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Brain Computer Interface  
A 1Gb/s silicon photo-receiver in standard CMOS for 850-nm optical communication 会议论文
2007 International Workshop on Electron Devices and Semiconductor Technology, Beijing, PEOPLES R CHINA, JUN 03-04, 2007
Authors:  Huang BJ (Huang Beiju);  Zhang X (Zhang Xu);  Liu HJ (Liu Haijun);  Liu JB (Liu, Jinbin);  Dai XG (Dai Xiaoguang);  Zhang Y (Zhang Yu);  Chen HD (Chen Hongda);  Huang, BJ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
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Complementary Metal-oxide-semiconductor (Cmos)