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Characterization of self-organized InAs/GaAs quantum dots under strain-induced and temperature-controlled nucleation mechanisms by atomic force microscopy and photoluminescence spectroscopy 会议论文
2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE, Shanghai, PEOPLES R CHINA, MAR 24-27, 2008
作者:  Liang, LY;  Ye, XL;  Jin, P;  Chen, YH;  Wang, ZG;  Liang, LY, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(799Kb)  |  收藏  |  浏览/下载：1624/232  |  提交时间：2010/03/09
Induced Refractive-index  Growth  Lasers  Gaas  
Observation of photogalvanic current for interband absorption in InN films at room temperature 会议论文
2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE, Shanghai, PEOPLES R CHINA, MAR 24-27, 2008
作者:  Tang, CG;  Chen, YH;  Liu, Y;  Zhang, RQ;  Liu, XL;  Wang, ZG;  Zhang, R;  Zhang, Z;  Tang, CG, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(236Kb)  |  收藏  |  浏览/下载：1874/374  |  提交时间：2010/03/09
Quantum-wells  Spin  
Intense room temperature near infrared emission from Al (3+) and Yb3+ ions 会议论文
2004 IST IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS, Hong Kong, PEOPLES R CHINA, SEP 29-OCT 01, 2004
作者:  Zhang JG;  Cheng BW;  Gao, JH;  Yu JZ;  Wang QM;  Zhang, JG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(190Kb)  |  收藏  |  浏览/下载：1237/273  |  提交时间：2010/03/29
Fluorescence  
Improved neutron radiation hardness for Si detectors: Application of low resistivity starting material and or manipulation of N-eff by selective filling of radiation-induced traps at low temperatures 会议论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 46 (3), TORONTO, CANADA, NOV 08-14, 1998
作者:  Dezillie B;  Li Z;  Eremin V;  Bruzzi M;  Pirollo S;  Pandey SU;  Li CJ;  Dezillie B Brookhaven Natl Lab Upton NY 11973 USA.
Adobe PDF(790Kb)  |  收藏  |  浏览/下载：1470/308  |  提交时间：2010/11/15
Silicon Detectors