Improved neutron radiation hardness for Si detectors: Application of low resistivity starting material and or manipulation of N-eff by selective filling of radiation-induced traps at low temperatures

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Improved neutron radiation hardness for Si detectors: Application of low resistivity starting material and or manipulation of N-eff by selective filling of radiation-induced traps at low temperatures
	Dezillie B; Li Z; Eremin V; Bruzzi M; Pirollo S; Pandey SU; Li CJ; Dezillie B Brookhaven Natl Lab Upton NY 11973 USA.
	1999
会议名称	1998 Nuclear Science Symposium (NSS)
会议录名称	IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 46 (3)
页码	221-227
会议日期	NOV 08-14, 1998
会议地点	TORONTO, CANADA
出版地	345 E 47TH ST, NEW YORK, NY 10017-2394 USA
出版者	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
ISSN	0018-9499
部门归属	brookhaven natl lab, upton, ny 11973 usa; russian acad sci, af ioffe physicotech inst, moscow 117901, russia; univ florence, dipartimento energet, i-50139 florence, italy; wayne state univ, detroit, mi 48201 usa; chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	Radiation-induced electrical changes in both space charge region (SCR) of Si detectors and bulk material (BM) have been studied for samples of diodes and resistors made on Si materials with different initial resistivities. The space charge sign inversion fluence (Phi(inv)) has been found to increase linearly with the initial doping concentration (the reciprocal of the resistivity), which gives improved radiation hardness to Si detectors fabricated from low resistivity material. The resistivity of the BM, on the other hand, has been observed to increase with the neutron fluence and approach a saturation value in the order of hundreds k Omega cm at high fluences, independent of the initial resistivity and material type. However, the fluence (Phi(s)), at which the resistivity saturation starts, increases with the initial doping concentrations and the value of Phi(s) is in the same order of that of Phi(inv) for all resistivity samples. Improved radiation hardness can also be achieved by the manipulation of the space charge concentration (N-eff) in SCR, by selective filling and/or freezing at cryogenic temperatures the charge state of radiation-induced traps, to values that will give a much smaller full depletion voltage. Models have been proposed to explain the experimental data.
关键词	Silicon Detectors
学科领域	半导体器件
主办者	IEEE.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/15017
专题	中国科学院半导体研究所（2009年前）
通讯作者	Dezillie B Brookhaven Natl Lab Upton NY 11973 USA.
推荐引用方式 GB/T 7714	Dezillie B,Li Z,Eremin V,et al. Improved neutron radiation hardness for Si detectors: Application of low resistivity starting material and or manipulation of N-eff by selective filling of radiation-induced traps at low temperatures[C]. 345 E 47TH ST, NEW YORK, NY 10017-2394 USA:IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC,1999:221-227.

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