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Advances in high power semiconductor diode lasers - art. no. 682402 会议论文
SEMICONDUCTOR LASERS AND APPLICATIONS III, Beijing, PEOPLES R CHINA, NOV 12-13, 2007
作者:  Ma, XY;  Zhong, L;  Ma, XY, Chinese Acad Sci, Inst Semicond, Natl Engn Res Ctr Optoelect Devices, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(671Kb)  |  收藏  |  浏览/下载：3150/1103  |  提交时间：2010/03/09
Laser Diodes  Laser Bar  Stacks  High Power  Power Conversion Efficiency  Reliability  Packaging  
A New Technique for Side Pumping of Double-Clad Fiber Lasers 会议论文
AOE 2007 ASIA OPTICAL FIBER COMMUNICATION & OPTOELECTRONIC EXPOSITION & CONFERENCE, Shanghai, PEOPLES R CHINA, OCT 17-19, 2007
作者:  Wang, DZ;  Feng, XM;  Wang, YG;  Wang, CL;  Lan, YS;  Liu, SP;  Ma, XY;  Wang, DZ, Chinese Acad Sci, Inst Semicond, Grp High Power Lasers, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(282Kb)  |  收藏  |  浏览/下载：1260/296  |  提交时间：2010/03/09
Application of ICA in on-line verification of the phase difference of the current sensor 会议论文
NEURAL INFORMATION PROCESSING丛书标题: LECTURE NOTES IN COMPUTER SCIENCE, Hong Kong, PEOPLES R CHINA, OCT 03-06, 2006
作者:  Ma, XY (Ma, Xiaoyan);  Lu, HX (Lu, Huaxiang);  Ma, XY, Chinese Acad Sci, Inst Semicond, Neural Network Lab, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xyma@semi.ac.cn
Adobe PDF(315Kb)  |  收藏  |  浏览/下载：1285/226  |  提交时间：2010/03/29
Independent Component Analysis (Ica)  Independent Subspace Analysis  Relative Likelihood Index  Current Sensor  Blind Source Separation  
Fabrication of semiconductor optical amplifiers and a novel gain measuring technique 会议论文
PROCEEDINGS OF THE SIXTH CHINESE OPTOELECTRONICS SYMPOSIUM, KOWLOON, PEOPLES R CHINA, SEP 12-14, 2003
作者:  Huang YZ;  Guo WH;  Yu LJ;  Lu XL;  Tan MQ;  Ma XY;  Huang YZ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(212Kb)  |  收藏  |  浏览/下载：1228/276  |  提交时间：2010/10/29
Spectra  Lasers  
High efficiency, low vertical divergence angle 980nnn Al-free active region lasers with novel large optical cavity and asymmetrical cladding layers 会议论文
IN-PLANE SEMICONDUCTOR LASERS IV, 3947, SAN JOSE, CA, JAN 24-25, 2000
作者:  Xiu ZT;  Zhang JM;  Ma XY;  Yang GW;  Shen GD;  Chen LH;  Xiu ZT Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(175Kb)  |  收藏  |  浏览/下载：1720/403  |  提交时间：2010/10/29
Sqw Lasers  Ingaasp  Power  Fiber  Nm  
High power 980 nm Al-free strained quantum-well lasers for erbium-doped fiber amplifiers 会议论文
OPTICAL MATERIALS, 14 (3), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:  Chen LH;  Xu ZT;  Ma XY;  Zhang JM;  Yang GW;  Xu JY;  Chen LH Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(271Kb)  |  收藏  |  浏览/下载：1221/283  |  提交时间：2010/11/15
High Power  Al-free Laser  Communication  Epitaxy  
AlGaInP visible quantum well lasers for information technology 会议论文
CZECHOSLOVAK JOURNAL OF PHYSICS, 49 (5), PRAGUE, CZECH REPUBLIC, JUN 15-17, 1998
作者:  Yu JZ;  Chen LH;  Ma XY;  Wang QM;  Yu JZ Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(272Kb)  |  收藏  |  浏览/下载：1291/401  |  提交时间：2010/11/15
High-power Operation  Diodes  
High performance 1.55 mu m InGaAsP/InP strained layer quantum well laser diodes fabricated by MOCVD overgrowth method 会议论文
SEMICONDUCTOR LASERS III, 3547, BEIJING, PEOPLES R CHINA, SEP 16-18, 1998
作者:  Ma XY;  Cao Q;  Wang ST;  Guo L;  Wang ZM;  Wang LM;  He GP;  Yang YL;  Zhang HQ;  Zhou XN;  Chen LH;  Ma XY Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(189Kb)  |  收藏  |  浏览/下载：1217/273  |  提交时间：2010/10/29
Ingaasp  Strained Layer Quantum Well  Laser Diode  Mocvd  
High brightness AlGaInP orange light emitting diodes 会议论文
DISPLAY DEVICES AND SYSTEMS II, 3560, BEIJING, PEOPLES R CHINA, SEP 16-17, 1998
作者:  Li YZ;  Wang GH;  Ma XY;  Peng HI;  Wang ST;  Chen LH;  Li YZ Chinese Acad Sci Inst Semicond Natl Engn Res Ctr Optoelect Devices POB 912 Beijing 100083 Peoples R China.
Adobe PDF(125Kb)  |  收藏  |  浏览/下载：1352/359  |  提交时间：2010/10/29
High Brightness  Led  Mocvd  Algainp  
Coupled AlxGa1-xAs-AlAs distributed Bragg reflectors for high brightness AlGaInP light emitting diodes 会议论文
DISPLAY DEVICES AND SYSTEMS II, 3560, BEIJING, PEOPLES R CHINA, SEP 16-17, 1998
作者:  Wang GH;  Ma XY;  Zhang YF;  Peng HI;  Wang ST;  Li YZ;  Chen LH;  Wang GH Chinese Acad Sci Inst Semicond Natl Engn Res Ctr Optoelect Devices POB 912 Beijing 100083 Peoples R China.
Adobe PDF(177Kb)  |  收藏  |  浏览/下载：1406/352  |  提交时间：2010/10/29
Led  Coupled Distributed Bragg Reflector  Mocvd  Algainp