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Single-mode operation of terahertz quantum cascade lasers 会议论文
Proceedings of SPIE 卷: 8195 文献号: 81950G, Beijing, PEOPLES R CHINA, 2011
作者:  Chen JY (Chen J. Y.);  Liu JQ (Liu J. Q.);  Liu FQ (Liu F. Q.);  Li L (Li L.);  Wang LJ (Wang L. J.);  Wang ZG (Wang Z. G.)
Adobe PDF(1326Kb)  |  收藏  |  浏览/下载：1804/377  |  提交时间：2011/12/13
Study on Broadband Emitting Self-Assembled Quantum-Dot Material and Devices 会议论文
NEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2, Hong Kong, PEOPLES R CHINA, JAN 03-08, 2010
作者:  Jin P (Jin P.);  Lv XQ (Lv X. Q.);  Liu N (Liu N.);  Zhang ZY (Zhang Z. Y.);  Wang ZG (Wang Z. G.);  Wang, ZG, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. 电子邮箱地址: zgwang@red.semi.ac.cn
Adobe PDF(141Kb)  |  收藏  |  浏览/下载：1703/330  |  提交时间：2010/11/01
Superluminescent Diodes  
In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD 会议论文
SILICON CARBIDE AND RELATED MATERIALS 2007, Otsu, JAPAN, OCT 14-19, 2007
作者:  Sun, GS;  Zhao, YM;  Wang, L;  Zhao, WS;  Liu, XF;  Ji, G;  Zeng, YP;  Sun, GS, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(273Kb)  |  收藏  |  浏览/下载：1733/274  |  提交时间：2010/03/09
In-situ Doping  Boron  Aluminum  Memory Effects  Hot-wall Lpcvd  4h-sic  
High epitaxial growth rate of 4H-SiC using TCS as silicon precursor 会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
作者:  Ji, G;  Sun, GS;  Ning, J;  Liu, XF;  Zhao, YM;  Wang, L;  Zhao, WS;  Zeng, YP;  Ji, G, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(1783Kb)  |  收藏  |  浏览/下载：1422/225  |  提交时间：2010/03/09
Simulation and fabrication of the SiC-based clamped-clamped filter 会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
作者:  Zhao, YM;  Ning, J;  Sun, GS;  Liu, XF;  Wang, L;  Ji, G;  Zhao, WS;  Li, JM;  Yang, FH;  Zhao, YM, Chinese Acad Sci, Inst Semicond, State Key Labs Transducer Technol, Beijing 100083, Peoples R China.
Adobe PDF(4954Kb)  |  收藏  |  浏览/下载：1468/274  |  提交时间：2010/03/09
Micromechanical Resonators  Frequency  
Single dipole mode photonic crystal laser on InGaAsP/InP QW waveguide slab - art. no. 698436 会议论文
THIN FILM PHYSICS AND APPLICATIONS,SIXTH INTERNATIONAL CONFERENCE, Shanghai, PEOPLES R CHINA, SEP 25-28, 2007
作者:  Zheng WH;  Xing MX;  Ren G;  Du XY;  Wang K;  Chen LH;  Zheng, WH, CAS, Inst Semicond, Nanooptoelect Lab, Beijing, Peoples R China.
Adobe PDF(313Kb)  |  收藏  |  浏览/下载：1698/254  |  提交时间：2010/03/09
Photonic Crystal  
Experimental investigation of slow light phenomenon in photonic crystal waveguide line defect laser 会议论文
PROCEEDINGS OF THE 2008 INTERNATIONAL WORKSHOP ON METAMATERIALS, Nanjing, PEOPLES R CHINA, NOV 09-12, 2008
作者:  Xing MX;  Ren G;  Chen W;  Zhou WJ;  Wang HL;  Chen LH;  Zheng WH;  Xing, MX, Chinese Acad Sci, Inst Semicond, Nanooptoelect Lab, Beijing 100083, Peoples R China.
Adobe PDF(750Kb)  |  收藏  |  浏览/下载：1311/273  |  提交时间：2010/03/09
Mode  
The whispering gallery mode in photonic crystal ring cavity - art. no. 698438 会议论文
THIN FILM PHYSICS AND APPLICATIONS,SIXTH INTERNATIONAL CONFERENCE, Shanghai, PEOPLES R CHINA, SEP 25-28, 2007
作者:  Xing MX;  Zheng WH;  Zhang YJ;  Ren G;  Du XY;  Wang K;  Chen LH;  Xing, MX, CAS, Inst Semicond, Nanooptoelect Lab, Beijing, Peoples R China.
Adobe PDF(860Kb)  |  收藏  |  浏览/下载：1525/439  |  提交时间：2010/03/09
Photonic Crystal  
Mode analysis of photonic crystal polarization beam splitter and its application in integrated circuits design - art. no. 698437 会议论文
THIN FILM PHYSICS AND APPLICATIONS,SIXTH INTERNATIONAL CONFERENCE, Shanghai, PEOPLES R CHINA, SEP 25-28, 2007
作者:  Ren G;  Zheng WH;  Zhang YJ;  Wang K;  Du XY;  Xing MX;  Chen LH;  Ren, G, Chinese Acad Sci, Inst Semicond, Nanooptoelect Lab, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(436Kb)  |  收藏  |  浏览/下载：1201/270  |  提交时间：2010/03/09
Photonic Crystal  
Micro-raman investigation of defects in a 4H-SiC homoepilayer 会议论文
Silicon Carbide and Related Materials 2006丛书标题: MATERIALS SCIENCE FORUM, Newcastle upon Tyne, ENGLAND, SEP, 2006
作者:  Liu, XF (Liu, X. F.);  Sun, GS (Sun, G. S.);  Li, JM (Li, J. M.);  Zhao, YM (Zhao, Y. M.);  Li, JY (Li, J. Y.);  Wang, L (Wang, L.);  Zhao, WS (Zhao, W. S.);  Luo, MC (Luo, M. C.);  Zeng, YP (Zeng, Y. P.);  Liu, XF, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(1318Kb)  |  收藏  |  浏览/下载：1395/197  |  提交时间：2010/03/29
Micro-raman  4h-sic  Defects  3c-inclusions  Triangle-shaped Inclusion  Epitaxial Layers  Silicon-carbide