Micro-raman investigation of defects in a 4H-SiC homoepilayer

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Micro-raman investigation of defects in a 4H-SiC homoepilayer
	Liu, XF (Liu, X. F.); Sun, GS (Sun, G. S.); Li, JM (Li, J. M.); Zhao, YM (Zhao, Y. M.); Li, JY (Li, J. Y.); Wang, L (Wang, L.); Zhao, WS (Zhao, W. S.); Luo, MC (Luo, M. C.); Zeng, YP (Zeng, Y. P.); Liu, XF, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
	2007
会议名称	6th European Conference on Silicon Carbide and Related Materials
会议录名称	Silicon Carbide and Related Materials 2006丛书标题: MATERIALS SCIENCE FORUM
页码	556-557: 387-390
会议日期	SEP, 2006
会议地点	Newcastle upon Tyne, ENGLAND
出版地	LAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH, SWITZERLAND
出版者	TRANS TECH PUBLICATIONS LTD
ISSN	0255-5476
部门归属	chinese acad sci, inst semicond, novel semicond mat lab, beijing 100083, peoples r china
摘要	Three types of defects, namely defect I, defect 11, defect 111, in the 4H-SiC homoepilayer were investigated by micro-raman scattering measurement. These defects all originate from a certain core and are composed of (1) a wavy tail region, (11) two long tails, the so called comet and (111) three plaits. It was found that there are 3C-SiC inclusions in the cores of defect 11 and defect III and the shape of inclusion determines the type of defect II or defect III. If the core contains a triangle-shaped inclusion, the defect III would be formed; otherwise, the defect 11 was formed. No inclusion was observed in the core of the defect I. The mechanisms of these defects are discussed.
关键词	Micro-raman 4h-sic Defects 3c-inclusions Triangle-shaped Inclusion Epitaxial Layers Silicon-carbide
学科领域	半导体材料
主办者	II VI Inc.; III Vs Review.; Cree Inc.; Compound Semicond.; Dow Corning Compound Semicond Solut.; LPE.; Norstel AB.; SemiSouth.; SiCED.; SiCrystal.; Surface Technol Syst plc.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/9856
专题	中国科学院半导体研究所（2009年前）
通讯作者	Liu, XF, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Liu, XF ,Sun, GS ,Li, JM ,et al. Micro-raman investigation of defects in a 4H-SiC homoepilayer[C]. LAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH, SWITZERLAND:TRANS TECH PUBLICATIONS LTD,2007:556-557: 387-390.

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