Simulation and fabrication of the SiC-based clamped-clamped filter

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Simulation and fabrication of the SiC-based clamped-clamped filter
	Zhao, YM; Ning, J; Sun, GS; Liu, XF; Wang, L; Ji, G; Zhao, WS; Li, JM; Yang, FH; Zhao, YM, Chinese Acad Sci, Inst Semicond, State Key Labs Transducer Technol, Beijing 100083, Peoples R China.
	2008
会议名称	9th International Conference on Solid-State and Integrated-Circuit Technology
会议录名称	2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY
页码	VOLS 1-4: 2524-2527
会议日期	OCT 20-23, 2008
会议地点	Beijing, PEOPLES R CHINA
出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
出版者	IEEE
ISBN	978-1-4244-2185-5
部门归属	[zhao, yongmei; ning, jin; sun, guosheng; liu, xingfang; wang, liang; yang, fuhua] chinese acad sci, inst semicond, state key labs transducer technol, beijing 100083, peoples r china
摘要	In this paper, the SiC-based clamped-clamped filter was designed and fabricated. The filter was composed of two clamped-clamped beam micromechanical resonators coupled by a spring coupling beam. Structural geometries, including the length and width of the resonator beam and coupling beam, were optimized by simulation for high frequency and high Q, under the material properties of SiC. The vibrating modes for the designed filter structure were analyzed by finite element analysis (FEA) method. For the optimized structure, the geometries of resonator beams and coupling beams, as well as the coupling position, the SiC-based clamped-clamped filter was fabricated by surface micromaching technology.
关键词	Micromechanical Resonators Frequency
学科领域	半导体材料
主办者	IEEE Beijing Sect.; Chinese Inst Elect.; IEEE Electron Devices Soc.; IEEE EDS Beijing Chapter.; IEEE Solid State Circuits Soc.; IEEE Circuites & Syst Soc.; IEEE Hong Kong EDS, SSCS Chapter.; IEEE SSCS Beijing Chapter.; Japan Soc Appl Phys.; Elect Div IEEE.; URSI Commiss D.; Inst Elect Engineers Korea.; Assoc Asia Pacific Phys Soc.; Peking Univ, IEEE EDS Student Chapter.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/8310
专题	中国科学院半导体研究所（2009年前）
通讯作者	Zhao, YM, Chinese Acad Sci, Inst Semicond, State Key Labs Transducer Technol, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Zhao, YM,Ning, J,Sun, GS,et al. Simulation and fabrication of the SiC-based clamped-clamped filter[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2008:VOLS 1-4: 2524-2527.

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