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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD
会议论文
SILICON CARBIDE AND RELATED MATERIALS 2007, Otsu, JAPAN, OCT 14-19, 2007
作者:
Sun, GS
;
Zhao, YM
;
Wang, L
;
Zhao, WS
;
Liu, XF
;
Ji, G
;
Zeng, YP
;
Sun, GS, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(273Kb)
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  |  
浏览/下载:1829/274
  |  
提交时间:2010/03/09
In-situ Doping
Boron
Aluminum
Memory Effects
Hot-wall Lpcvd
4h-sic
In-situ Boron-doped Low-stress LPCVD Polysilicon for Micromechanical Disk Resonator
会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
作者:
Liu, YF
;
Xie, J
;
Yang, JL
;
Tang, LJ
;
Yang, FH
;
Liu, YF, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(1394Kb)
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浏览/下载:1520/370
  |  
提交时间:2010/03/09
Films
Homoepitaxial growth of 4H-SiC multi-epilayers and its application to UV detection
会议论文
Silicon Carbide and Related Materials 2006丛书标题: MATERIALS SCIENCE FORUM, Newcastle upon Tyne, ENGLAND, SEP, 2006
作者:
Liu, XF (Liu, X. F.)
;
Sun, GS (Sun, G. S.)
;
Zhao, YM (Zhao, Y. M.)
;
Ning, J (Ning, J.)
;
Li, JY (Li, J. Y.)
;
Wang, L (Wang, L.)
;
Zhao, WS (Zhao, W. S.)
;
Luo, MC (Luo, M. C.)
;
Li, JM (Li, J. M.)
;
Liu, XF, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(908Kb)
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浏览/下载:1263/198
  |  
提交时间:2010/03/29
Homoepitaxy
4h-sic
Multi-epilayer
Uv Detection
p(+)-pi-n(-)
Ultraviolet Photodetector
Epitaxial-growth
Photoluminescence and Raman scattering correlated study of boron-doped silicon nanowires
会议论文
Science and Technology of Nanomaterials - ICMAT 2003丛书标题: JOURNAL OF METASTABLE AND NANOCRYSTALLINE MATERIALS SERIES, Singapore, SINGAPORE, DEC 07-12, 2003
作者:
Zeng, XB
;
Liao, XB
;
Dai, ST
;
Wang, B
;
Xu, YY
;
Xiang, XB
;
Hu, ZH
;
Diao, HW
;
Kong, GL
;
Zeng, XB, Chinese Acad Sci, Inst Semicond, State Key Lab Surface Phys, Beijing 100083, Peoples R China.
Adobe PDF(892Kb)
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浏览/下载:1833/241
  |  
提交时间:2010/03/29
Chemical Vapor Deposition Processes
Nanomaterials
Semiconducting Silicon
Visible Photoluminescence
Porous Silicon
Amorphous-silicon
Si
Spectroscopy
Films
Nanostructures
Confinement
Growth
Space-grown SI-GaAs and its application
会议论文
2002 12TH INTERNATIONAL CONFERENCE ON SEMICONDUCTING & INSULATING MATERIALS, SMOLENICE, SLOVAKIA, JUN 30-JUL 05, 2002
作者:
Chen NF
;
Zhong XG
;
Zhang M
;
Lin LY
;
Chen NF Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(239Kb)
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收藏
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浏览/下载:1969/365
  |  
提交时间:2010/10/29
Semiinsulating Gallium-arsenide
Floating-zone Growth
Crystal-growth
Zero Gravity
Microgravity
Segregation
Stoichiometry
Silicon
Defects
Insb
Study on optical band gap of boron-doped nc-Si : H film
会议论文
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (28-29), XIAN, PEOPLES R CHINA, JUN 10-14, 2002
作者:
Wei WS
;
Wang TM
;
Zhang CX
;
Li GH
;
Han HX
;
Ding K
;
Wei WS Beijing Univ Aeronaut & Astronaut Sch Sci Ctr Mat Phys & Chem Beijing 100083 Peoples R China.
Adobe PDF(860Kb)
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收藏
  |  
浏览/下载:1154/213
  |  
提交时间:2010/11/15
Amorphous-silicon
In situ doping of 3C-SiC grown on (0001) sapphire substrates by LPCVD
会议论文
SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3, TSUKUBA, JAPAN, OCT 28-NOV 02, 2001
作者:
Sun GS
;
Luo MC
;
Wang L
;
Zhu SR
;
Li JM
;
Zeng YP
;
Lin LY
;
Sun GS Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(751Kb)
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收藏
  |  
浏览/下载:1629/300
  |  
提交时间:2010/11/15
3c-sic
In-situ Doping
Low-pressure Cvd
Sapphire Substrate
Chemical-vapor-deposition
Competition Epitaxy
Residual donors in undoped LEC InP
会议论文
SIMC-XI: 2000 INTERNATIONAL SEMICONDUCTING AND INSULATING MATERIALS CONFERENCE, PROCEEDINGS, CANBERRA, AUSTRALIA, JUL 03-07, 2000
作者:
Zhao YW
;
Sun NF
;
Sun TN
;
Lin LY
;
Wu XW
;
Guo WL
;
Wu X
;
Bi KY
;
Zhao YW Chinese Acad Sci Inst Semicond Ctr Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(231Kb)
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收藏
  |  
浏览/下载:1480/331
  |  
提交时间:2010/10/29
Indium-phosphide
Carbon
Defects
Growth
Semi-insulating GaAs grown in outer space
会议论文
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 75 (2-3), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:
Chen NF
;
Zhong XR
;
Lin LY
;
Xie X
;
Zhang M
;
Chen NF Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(158Kb)
  |  
收藏
  |  
浏览/下载:1537/315
  |  
提交时间:2010/11/15
Gaas
Outer Space
Microgravity
Integrated Circuit
Semiinsulating Gallium-arsenide
Lec-gaas
Defects
Stoichiometry
Segregation
Carbon
Boron
High quality hydrogenated amorphous silicon films with significantly improved stability
会议论文
AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY-1998, 507, SAN FRANCISCO, CA, APR 14-17, 1998
作者:
Sheng SR
;
Liao XB
;
Ma ZX
;
Yue GZ
;
Wang YQ
;
Kong GL
;
Sheng SR Chinese Acad Sci State Lab Surface Phys Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(390Kb)
  |  
收藏
  |  
浏览/下载:1414/281
  |  
提交时间:2010/10/29
A-si-h
Light Soaking
Photoconductivity
Increase