High quality hydrogenated amorphous silicon films with significantly improved stability

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	High quality hydrogenated amorphous silicon films with significantly improved stability
	Sheng SR; Liao XB; Ma ZX; Yue GZ; Wang YQ; Kong GL; Sheng SR Chinese Acad Sci State Lab Surface Phys Inst Semicond Beijing 100083 Peoples R China.
	1999
会议名称	Symposium on Amorphous and Microcrystalline Silicon Technology-1998, at the MRS Spring Meeting
会议录名称	AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY-1998, 507
页码	969-974
会议日期	APR 14-17, 1998
会议地点	SAN FRANCISCO, CA
出版地	506 KEYSTONE DRIVE, WARRENDALE, PA 15088-7563 USA
出版者	MATERIALS RESEARCH SOCIETY
ISSN	0272-9172
ISBN	1-55899-413-0
部门归属	chinese acad sci, state lab surface phys, inst semicond, beijing 100083, peoples r china
摘要	High quality hydrogenated amorphous silicon (a-Si:H) films have been prepared by a simple "uninterrupted growth/annealing" plasma enhanced chemical vapor deposition (PECVD) technique, combined with a subtle boron-compensated doping. These a-Si:H films possess a high photosensitivity over 10(6), and exhibit no degradation in photoconductivity and a low light-induced defect density after prolonged illumination. The central idea is to control the growth conditions adjacent to the critical point of phase transition from amorphous to crystalline state, and yet to locate the Fermi level close to the midgap. Our results show that the improved stability and photosensitivity of a-Si:H films prepared by this method can be mainly attributed to the formation of a more robust network structure and reduction in the precursors density of light-induced metastable defects.
关键词	A-si-h Light Soaking Photoconductivity Increase
学科领域	半导体材料
主办者	Mat Res Soc.; Akzo Nobel.; dpiX A Xerox Co.; Fuji Elect Corp Res & Dev Ltd.; Kaneka Corp.; Mitsui Chem Co Ltd.; NAPS France.; Natl Renewable Energy Lab.; Sanyo Elect Co Ltd.; Tokuyama Corp.; Voltaix Inc.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13799
专题	中国科学院半导体研究所（2009年前）
通讯作者	Sheng SR Chinese Acad Sci State Lab Surface Phys Inst Semicond Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Sheng SR,Liao XB,Ma ZX,et al. High quality hydrogenated amorphous silicon films with significantly improved stability[C]. 506 KEYSTONE DRIVE, WARRENDALE, PA 15088-7563 USA:MATERIALS RESEARCH SOCIETY,1999:969-974.

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