Residual donors in undoped LEC InP

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Residual donors in undoped LEC InP
	Zhao YW; Sun NF; Sun TN; Lin LY; Wu XW; Guo WL; Wu X; Bi KY; Zhao YW Chinese Acad Sci Inst Semicond Ctr Mat Sci POB 912 Beijing 100083 Peoples R China.
	2000
会议名称	11th International Semiconducting and Insulating Materials Conference (SIMC-XI)
会议录名称	SIMC-XI: 2000 INTERNATIONAL SEMICONDUCTING AND INSULATING MATERIALS CONFERENCE, PROCEEDINGS
页码	179-182
会议日期	JUL 03-07, 2000
会议地点	CANBERRA, AUSTRALIA
出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
出版者	IEEE
ISBN	0-7803-5815-5
部门归属	chinese acad sci, inst semicond, ctr mat sci, beijing 100083, peoples r china
摘要	Undoped liquid encapsulated Czochralski (LEC) InP samples have been studied by Hall effect, glow discharge mass spectroscopy (GDMS) and infrared absorption spectroscopy. A systematic discrepancy has been found between the Han electron concentration and net donor concentration measured by GDMS. The electron concentration is always higher than the net shallow donor concentration by about (3-6)x10(15)cm(-3). A hydrogen indium vacancy complex donor defect VInH4 was detected regularly by infrared absorption spectroscopy in all undoped LEC InP samples. The fact can be explained by taking into account the existence of the donor defect in as-grown undoped LEC-InP.
关键词	Indium-phosphide Carbon Defects Growth
学科领域	半导体材料
主办者	IEEE Electron Devices Soc.; Australian Natl Univ.; AIXTRON.; Oxford Instruments Plasma Technol.; Ledex Corp.; IEEE ACT Sect.; IEEE Electron Devices Soc, Australian Chapter.; Lasers & Electro-Opt Soc.; Australian Mat Res Soc.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13747
专题	中国科学院半导体研究所（2009年前）
通讯作者	Zhao YW Chinese Acad Sci Inst Semicond Ctr Mat Sci POB 912 Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Zhao YW,Sun NF,Sun TN,et al. Residual donors in undoped LEC InP[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2000:179-182.

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