| 硅基高晶体质量InAsSb平面纳米线的生长方法 | |
| 杨涛; 杜文娜; 杨晓光; 王小耶; 季祥海; 王占国 | |
| Rights Holder | 中国科学院半导体所 |
| Date Available | 2016-09-12 |
| Country | 中国 |
| Subtype | 发明 |
| Subject Area | 半导体材料 |
| Application Date | 2014-12-17 |
| Application Number | CN201410785433.2 |
| Document Type | 专利 |
| Identifier | http://ir.semi.ac.cn/handle/172111/27449 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | 杨涛,杜文娜,杨晓光,等. 硅基高晶体质量InAsSb平面纳米线的生长方法. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 硅基高晶体质量InAsSb平面纳米线的生（878KB） | 限制开放 | License | Application Full Text | |||
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