SEMI OpenIR  > 中科院半导体材料科学重点实验室
半极性面氮化镓基发光二极管及其制备方法
项若飞; 汪连山; 赵桂娟; 金东东; 王建霞; 李辉杰; 张恒; 冯玉霞; 焦春美; 魏鸿源; 杨少延; 王占国
Rights Holder中国科学院半导体所
Date Available2016-09-12
Country中国
Subtype发明
Subject Area半导体材料
Application Date2014-04-14
Application NumberCN201410147977.6
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/27401
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
项若飞,汪连山,赵桂娟,等. 半极性面氮化镓基发光二极管及其制备方法.
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