| 半极性面氮化镓基发光二极管及其制备方法 | |
| 项若飞; 汪连山; 赵桂娟; 金东东; 王建霞; 李辉杰; 张恒; 冯玉霞; 焦春美; 魏鸿源; 杨少延; 王占国 | |
| Rights Holder | 中国科学院半导体所 |
| Date Available | 2016-09-12 |
| Country | 中国 |
| Subtype | 发明 |
| Subject Area | 半导体材料 |
| Application Date | 2014-04-14 |
| Application Number | CN201410147977.6 |
| Document Type | 专利 |
| Identifier | http://ir.semi.ac.cn/handle/172111/27401 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | 项若飞,汪连山,赵桂娟,等. 半极性面氮化镓基发光二极管及其制备方法. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 半极性面氮化镓基发光二极管及其制备方法.（1070KB） | 限制开放 | License | Application Full Text | |||
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