SEMI OpenIR  > 中科院半导体材料科学重点实验室
一种制备六方氮化硼二维原子晶体的方法
张兴旺; 王浩林; 刘鑫; 孟军华; 尹志岗
Rights Holder中国科学院半导体所
Date Available2016-08-30
Country中国
Subtype发明
Subject Area半导体材料
Application Date2014-09-30
Application NumberCN201410520082.2
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/27291
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
张兴旺,王浩林,刘鑫,等. 一种制备六方氮化硼二维原子晶体的方法.
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