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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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中科院半导体材料科学... [2]
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2016 [1]
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离子束溅射沉积制备六方氮化硼二维原子晶体
学位论文
, 北京: 中国科学院研究生院, 2016
Authors:
王浩林
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Submit date：2016/07/07
六方氮化硼
二维原子晶体
离子束溅射沉积
衬底
大尺寸晶畴
一种制备六方氮化硼二维原子晶体的方法
专利
专利类型: 发明, 公开日期: 2016-08-30
Inventors:
张兴旺
;
王浩林
;
刘鑫
;
孟军华
;
尹志岗
Adobe PDF(763Kb)
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Submit date：2016/08/30
