SEMI OpenIR  > 半导体超晶格国家重点实验室
一种雪崩光电二极管及其制作方法
向伟; 王国伟; 徐应强; 郝宏玥; 蒋洞微; 任正伟; 贺振宏; 牛智川
Rights Holder中国科学院半导体所
Date Available2016-08-30
Country中国
Subtype发明
Subject Area半导体物理
Application Date2014-12-24
Application NumberCN201410818494.4
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/27275
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
向伟,王国伟,徐应强,等. 一种雪崩光电二极管及其制作方法.
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