SEMI OpenIR  > 中科院半导体材料科学重点实验室
硫族元素超饱和掺杂硅红外探测器及其制作方法
王科范; 彭成晓; 刘孔; 谷城; 曲胜春; 王占国
Rights Holder中国科学院半导体研究所
Date Available2014-04-30
Country中国
Subtype发明
Subject Area半导体材料
Application Date2014-01-24
Application NumberCN201410035355.4
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25842
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
王科范,彭成晓,刘孔,等. 硫族元素超饱和掺杂硅红外探测器及其制作方法.
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