SEMI OpenIR  > 半导体超晶格国家重点实验室
InSb/GaSb量子点结构器件及生长方法
邢军亮; 张宇; 徐应强; 王国伟; 王娟; 向伟; 任正伟; 牛智川
Rights Holder中国科学院半导体研究所
Date Available2013-12-11
Country中国
Subtype发明
Subject Area半导体物理
Application Date2013-08-30
Application NumberCN201310388446.1
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25780
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
邢军亮,张宇,徐应强,等. InSb/GaSb量子点结构器件及生长方法.
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