InSb/GaSb量子点结构器件及生长方法

	InSb/GaSb量子点结构器件及生长方法
	邢军亮; 张宇; 徐应强; 王国伟; 王娟; 向伟; 任正伟; 牛智川
Rights Holder	中国科学院半导体研究所
Date Available	2013-12-11
Country	中国
Subtype	发明
Subject Area	半导体物理
Application Date	2013-08-30
Application Number	CN201310388446.1
Document Type	专利
Identifier	http://ir.semi.ac.cn/handle/172111/25780
Collection	半导体超晶格国家重点实验室
Recommended Citation GB/T 7714	邢军亮,张宇,徐应强,等. InSb/GaSb量子点结构器件及生长方法.

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