Knowledge Management System Of Institute of Semiconductors,CAS
InSb/GaSb量子点结构器件及生长方法 | |
邢军亮; 张宇; 徐应强; 王国伟; 王娟; 向伟; 任正伟; 牛智川 | |
Rights Holder | 中国科学院半导体研究所 |
Date Available | 2013-12-11 |
Country | 中国 |
Subtype | 发明 |
Subject Area | 半导体物理 |
Application Date | 2013-08-30 |
Application Number | CN201310388446.1 |
Document Type | 专利 |
Identifier | http://ir.semi.ac.cn/handle/172111/25780 |
Collection | 半导体超晶格国家重点实验室 |
Recommended Citation GB/T 7714 | 邢军亮,张宇,徐应强,等. InSb/GaSb量子点结构器件及生长方法. |
Files in This Item: | ||||||
File Name/Size | DocType | Version | Access | License | ||
InSb_GaSb量子点结构器件及生长方(1368KB) | 限制开放 | License | Application Full Text |
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