| 优化配置的多腔室MOCVD反应系统 | |
| 纪攀峰; 马平; 王军喜; 胡强; 冉军学; 曾一平; 李晋闽 | |
| Rights Holder | 中国科学院半导体研究所 |
| Date Available | 2014-02-05 |
| Country | 中国 |
| Subtype | 发明 |
| Subject Area | 半导体器件 |
| Application Date | 2013-10-14 |
| Application Number | CN201310477594.0 |
| Document Type | 专利 |
| Identifier | http://ir.semi.ac.cn/handle/172111/25513 |
| Collection | 中科院半导体照明研发中心 |
| Recommended Citation GB/T 7714 | 纪攀峰,马平,王军喜,等. 优化配置的多腔室MOCVD反应系统. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 优化配置的多腔室MOCVD反应系统.pd（633KB） | 限制开放 | License | Application Full Text | |||
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