SEMI OpenIR  > 中科院半导体照明研发中心
优化配置的多腔室MOCVD反应系统
纪攀峰; 马平; 王军喜; 胡强; 冉军学; 曾一平; 李晋闽
Rights Holder中国科学院半导体研究所
Date Available2014-02-05
Country中国
Subtype发明
Subject Area半导体器件
Application Date2013-10-14
Application NumberCN201310477594.0
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25513
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
纪攀峰,马平,王军喜,等. 优化配置的多腔室MOCVD反应系统.
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优化配置的多腔室MOCVD反应系统.pd(633KB) 限制开放LicenseApplication Full Text
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