SEMI OpenIR  > 中科院半导体材料科学重点实验室
制备非极性A面GaN薄膜的方法
刘建明; 桑玲; 赵桂娟; 刘长波; 王建霞; 魏鸿源; 焦春美; 刘祥林; 杨少延; 王占国
Rights Holder中国科学院半导体研究所
Date Available2013-01-30
Country中国
Subtype发明
Subject Area半导体材料
Application Date2012-08-28
Application NumberCN201210311148.8
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25204
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
刘建明,桑玲,赵桂娟,等. 制备非极性A面GaN薄膜的方法.
Files in This Item:
File Name/Size DocType Version Access License
制备非极性A面GaN薄膜的方法(1).p(376KB) 限制开放LicenseApplication Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[刘建明]'s Articles
[桑玲]'s Articles
[赵桂娟]'s Articles
Baidu academic
Similar articles in Baidu academic
[刘建明]'s Articles
[桑玲]'s Articles
[赵桂娟]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[刘建明]'s Articles
[桑玲]'s Articles
[赵桂娟]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.