SEMI OpenIR  > 中科院半导体材料科学重点实验室
非极性 InGaN 薄膜的生长及相关物性研究
赵桂娟
Subtype博士
Thesis Advisor刘祥林 ; 杨少延
2013
Degree Grantor中国科学院研究生院
Place of Conferral北京
Degree Discipline材料物理与化学
Subject Area半导体材料
Language中文
Date Available2013-06-20
Document Type学位论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24228
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
赵桂娟. 非极性 InGaN 薄膜的生长及相关物性研究[D]. 北京. 中国科学院研究生院,2013.
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