SEMI OpenIR  > 纳米光电子实验室
“W”型锑化物二类量子阱的外延生长方法; “W”型锑化物二类量子阱的外延生长方法
迂修; 张宇; 王国伟; 徐应强; 徐云; 宋国峰
Rights Holder中国科学院半导体研究所
Date Available2012-09-09 ; 2012-09-09 ; 2012-09-09
Country中国
Subtype发明
Abstract 一种“W”型锑化物二类量子阱的外延生长方法,包括如下步骤:步骤1:选择一衬底;步骤2:对该衬底进行脱氧除气处理并观察表面再构;步骤3:在该衬底上依次生长缓冲层、10个周期的“W”结构二类量子阱有源区和GaSb盖层。
metadata_83纳米光电子实验室
Patent NumberCN102157903A
Language中文
Status公开
Application Number CN201110027237.5
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/23460
Collection纳米光电子实验室
Recommended Citation
GB/T 7714
迂修,张宇,王国伟,等. “W”型锑化物二类量子阱的外延生长方法, “W”型锑化物二类量子阱的外延生长方法. CN102157903A.
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