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GeSn合金的外延生长方法
成步文; 薛春来; 左玉华; 汪巍; 胡炜玄; 苏少坚; 白安琪; 薛海韵
Rights Holder中国科学院半导体研究所
Date Available2011-08-30
Country中国
Subtype发明
Abstract一种GeSn合金的外延生长方法,包括如下步骤:步骤1:将一Sn固体金属作为Sn源材料置入真空腔的Sn固体源炉中;步骤2:将一衬底置入分子束外延源炉的真空腔的加热器上,对真空腔抽真空,对衬底加热;步骤3:对Sn固体金属加热,使Sn固体金属熔化,蒸发产生Sn的原子,打开挡板,使Sn原子到达衬底表面;步骤4:向分子束外延源炉的真空腔内通入含有Ge的化合物气体,使Ge原子淀积到衬底表面,完成GeSn合金的外延生长。
metadata_83集成光电子学国家重点实验室
Patent NumberCN200910088391.6
Language中文
Status公开
Application NumberCN200910088391.6
Patent Agent汤保平
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/22051
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
成步文,薛春来,左玉华,等. GeSn合金的外延生长方法. CN200910088391.6.
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