Si-based optoelectronic devices and their attractive applications
Wang QM; Yang QQ; Zhu YQ; Si JJ; Liu YL; Lei HB; Cheng BW; Yu JZ; Wang QM Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
1999
会议名称1st Czech-Chinese Workshop on Advanced Materials for Optoelectronics (AMFO 98)
会议录名称CZECHOSLOVAK JOURNAL OF PHYSICS, 49 (5)
页码837-848
会议日期JUN 15-17, 1998
会议地点PRAGUE, CZECH REPUBLIC
出版地FYZIKALNI USTAV AV NA SLOVANCE 2, PRAGUE 180 40, CZECH REPUBLIC
出版者CZECHOSLOVAK JNL OF PHYSICS
ISSN0011-4626
部门归属chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
摘要The semiconductor photonics and optoelectronics which have a great significance in the development of advanced high technology of information systems will be discussed in this paper. The emphasis will be put on the recent research carried out in our laboratory in enhanced luminescence from low dimensional materials such as SiGe/Si and Er-doped Si-rich SiO2/Si and Er-doped SixNy/Si. A ring shape waveguide structure, used to promote the effective absorption coefficient in PIN photodetector for 1.3 mu m wavelength and a resonant cavity enhanced structure, used to improve the quantum efficiency and response in heterostructure photo-transistor (HPT), are also proposed in this paper.
学科领域半导体物理
主办者Inst Radio Engn & Electr.; Acad Sci Czech Republ, Prague.
收录类别CPCI-S
语种英语
文献类型会议论文
条目标识符http://ir.semi.ac.cn/handle/172111/15027
专题中国科学院半导体研究所(2009年前)
通讯作者Wang QM Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
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Wang QM,Yang QQ,Zhu YQ,et al. Si-based optoelectronic devices and their attractive applications[C]. FYZIKALNI USTAV AV NA SLOVANCE 2, PRAGUE 180 40, CZECH REPUBLIC:CZECHOSLOVAK JNL OF PHYSICS,1999:837-848.
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