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Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films 期刊论文
APPLIED PHYSICS LETTERS, 2009, 卷号: 95, 期号: 4, 页码: Art. No. 041901
Authors:  Zhao DG;  Jiang DS;  Zhu JJ;  Liu ZS;  Wang H;  Zhang SM;  Wang YT;  Yang H;  Zhao DG Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: dgzhao@red.semi.ac.cn
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Edge Dislocations  Gallium Compounds  Iii-v Semiconductors  Impurities  Photoluminescence  Semiconductor Doping  Semiconductor Thin Films  Silicon  Wide Band Gap Semiconductors  X-ray Diffraction  
Influence of defects in n(-)-GaN layer on the responsivity of Schottky barrier ultraviolet photodetectors 期刊论文
APPLIED PHYSICS LETTERS, 2007, 卷号: 90, 期号: 6, 页码: Art.No.062106
Authors:  Zhao DG;  Jiang DS;  Zhu JJ;  Liu ZS;  Zhang SM;  Liang JW;  Yang H;  Li X;  Li XY;  Gong HM;  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: dgzhao@red.semi.ac.cn
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Chemical-vapor-deposition  
Band gap renormalization and carrier localization effects in InGaN/GaN quantum-wells light emitting diodes with Si doped barriers 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 88, 期号: 4, 页码: Art.No.041903
Authors:  Wang YJ;  Xu SJ;  Li Q;  Zhao DG;  Yang H;  Xu, SJ, Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China. E-mail: sjxu@hkucc.hku.hk
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Photoluminescence  Luminescence  
Quantum dissipation and broadening mechanisms due to electron-phonon interactions in self-formed InGaN quantum dots 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 88, 期号: 8, 页码: Art.No.083123
Authors:  Xu SJ;  Li GQ;  Wang YJ;  Zhao Y;  Chen GH;  Zhao DG;  Zhu JJ;  Yang H;  Yu DP;  Wang JN;  Xu, SJ, Univ Hong Kong, Joint Lab New Mat, CAS, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China. E-mail: sjxu@hkucc.hku.hk
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Luminescence  Temperature  Model  
Role of edge dislocations in enhancing the yellow luminescence of n-type GaN 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 88, 期号: 24, 页码: Art.No.241917
Authors:  Zhao DG;  Jiang DS;  Zhu JJ;  Liu ZS;  Zhang SM;  Liang JW;  Li X;  Li XY;  Gong HM;  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail: dgzhao@red.semi.ac.cn
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Chemical-vapor-deposition  Molecular-beam Epitaxy  X-ray-diffraction  Mg-doped Gan  Undoped Gan  Photoluminescence Bands  Threading Dislocations  Positron-annihilation  Growth Stoichiometry  Gallium Nitride  
Stress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire 期刊论文
APPLIED PHYSICS LETTERS, 2003, 卷号: 83, 期号: 4, 页码: 677-679
Authors:  Zhao DG;  Xu SJ;  Xie MH;  Tong SY;  Yang H;  Xu SJ,Univ Hong Kong,Dept Phys,Pokfulam Rd,Hong Kong,Hong Kong,Peoples R China.
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Vapor-phase Epitaxy  Phonon Deformation Potentials  Molecular-beam Epitaxy  Raman-scattering  Alpha-gan  Aln  Layers  Strain  Wurtzite  Films  
Optical characterization of high-purity cubic GaN grown on GaAs (001) substrate by metalorganic chemical vapor deposition 期刊论文
APPLIED PHYSICS LETTERS, 2000, 卷号: 76, 期号: 21, 页码: 3025-3027
Authors:  Xu DP;  Yang H;  Li JB;  Zhao DG;  Li SF;  Zhuang SM;  Wu RH;  Chen Y;  Li GH;  Yang H,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,Beijing 100083,Peoples R China.
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Molecular-beam Epitaxy  Photoluminescence  
Photovoltaic effect of cubic GaN/GaAs(100) 期刊论文
APPLIED PHYSICS LETTERS, 1999, 卷号: 75, 期号: 24, 页码: 3823-3825
Authors:  Zhao DG;  Jiang DS;  Yang H;  Zheng LX;  Xu DP;  Li JB;  Wang QM;  Zhao DG,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,POB 912,Beijing 100083,Peoples R China.
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Gan