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Recyclable surface-enhanced Raman scattering template based on nanoporous gold film/Si nanowire arrays 期刊论文
APPLIED PHYSICS LETTERS, 2014, 卷号: 105, 期号: 1, 页码: 011905
Authors:  Zhang, CX;  Liu, L;  Yin, HJ;  Fang, H;  Zhao, YM;  Bi, CJ;  Xu, HJ
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Large-Area and Ordered Sexfoil Pore Arrays by Spherical-Lens Photolithography 期刊论文
ACS PHOTONICS, 2014, 卷号: 1, 期号: 8, 页码: 754-760
Authors:  Geng, C;  Yan, QF;  Du, CX;  Dong, P;  Zhang, LJ;  Wei, TB;  Hao, ZB;  Wang, XQ;  Shen, DH
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High Transmission and Low Group Velocity of a Photonic Crystal Coupled-Cavity Waveguide 期刊论文
SPECTROSCOPY AND SPECTRAL ANALYSIS, 2012, 卷号: 32, 期号: 5, 页码: 1339-1344
Authors:  Zhang, CX;  Xu, XS
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Low group velocity in a photonic crystal coupled-cavity waveguide 期刊论文
CHINESE PHYSICS B, 2012, 卷号: 21, 期号: 4, 页码: 44213
Authors:  Zhang, CX;  Xu, XS
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A self-aligned process for phase-change material nanowire confined within metal electrode nanogap 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 99, 期号: 17, 页码: 173107
Authors:  Ma, HL;  Wang, XF;  Zhang, JY;  Wang, XD;  Hu, CX;  Yang, X;  Fu, YC;  Chen, XG;  Song, ZT;  Feng, SL;  Ji, A;  Yang, FH;  Yang, FH (reprint author), Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing 100083, Peoples R China,fhyang@red.semi.ac.cn
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Change Memory  Nonvolatile  Storage  Cell  
在解理面上制作半导体纳米结构的方法 专利
专利类型: 发明, 申请日期: 2006-01-25, 公开日期: 2009-06-04, 2009-06-11
Inventors:  陈涌海;  张春玲;  崔草香;  徐波;  金鹏;  刘峰奇;  王占国
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高质量二维光子晶体结构刻蚀掩膜版的制作方法 期刊论文
半导体学报, 2006, 卷号: 27, 期号: 9, 页码: 1640-1644
Authors:  杜伟;  许兴胜;  韩伟华;  王春霞;  张杨;  杨富华;  陈弘达
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Site controlling of InAs quantum wires on cleaved edges of AlGaAs/GaAs superlattices 期刊论文
NANOTECHNOLOGY, 2005, 卷号: 16, 期号: 8, 页码: 1379-1382
Authors:  Zhang CL;  Wang ZG;  Chen YH;  Cui CX;  Xu B;  Jin P;  Li RY;  Zhang, CL, Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
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Diffusion Length  
The structural and photoluminescence character of InAs quantum dots grown on a combined InAlAs and GaAs strained buffer 期刊论文
PRICM 5: THE FIFTH PACIFIC RIM INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS AND PROCESSING, 2005, 卷号: PTS 1-5, 期号: 475-479, 页码: 1791-1794
Authors:  Shi, GX;  Xu, B;  Jin, P;  Ye, XL;  Cui, CX;  Zhang, CL;  Wu, J;  Wang, ZG;  Shi, GX, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: gxshi@red.semi.ac.cn
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Quantum Dots  Strain Buffer Layer  Inas  Photoluminescence  Well  Laser  Layer  
A novel method for positioning of InAs islands on GaAs(110) 期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2005, 卷号: 28, 期号: 4, 页码: 537-544
Authors:  Cui CX;  Chen YH;  Zhang CL;  Jin P;  Shi GX;  Zhao C;  Xu B;  Wang ZG;  Chen, YH, Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: yhchen@red.semi.ac.cn
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Inas Island