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Two-Color niBin Type II Superlattice Infrared Photodetector With External Quantum Efficiency Larger Than 100% 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2017, 卷号: 38, 页码: 1266-1269
Authors:  Jianliang Huang;  Wenquan Ma;  Yanhua Zhang;  Yulian Cao;  Wenjun Huang;  Chengcheng Zhao
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Electron mobility of inverted InAs/GaSb quantum well structure 期刊论文
Solid State Communications, 2017, 卷号: 267, 页码: 29-32
Authors:  Wenjun Huang;  Wenquan Ma;  Jianliang Huang;  Yanhua Zhang;  Yulian Cao;  Chengcheng Zhao;  Xiaolu Guo
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Pushing Detection Wavelength Toward 1 μm by Type II InAs/GaAsSb Superlattices With AlSb Insertion Layers 期刊论文
IEEE Electron Device Letters, 2016, 卷号: 37, 期号: 9, 页码: 1166 - 1169
Authors:  Yanhua Zhang;  Wenquan Ma;  Jianliang Huang;  Yulian Cao;  Ke Liu;  Wenjun Huang;  Chengcheng Zhao;  Haiming Ji;  Tao Yang
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Hybrid III–V/silicon laser with laterally coupled Bragg grating 期刊论文
Optics Express, 2015, 卷号: 23, 期号: 7, 页码: 8809-8817
Authors:  YuLian Cao;  XiaoNan Hu;  XianShu Luo;  JunFeng Song;  Yuanbing Cheng;  ChengMing Li;  Chong-Yang Liu;  Hong Wang;  Liow Tsung Yang;  GuoQiang Lo;  QiJie Wang
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Impact of band structure of Ohmic contact layers on the response feature of p-i-n very long wavelength type II InAs/GaSb superlattice photodetector 期刊论文
Applied Physics Letters, 2015, 卷号: 106, 期号: 26, 页码: 1-5
Authors:  Jianliang Huang;  Wenquan Ma;  Yanhua Zhang;  Yulian Cao;  Ke Liu;  Wenjun Huang;  Shulong Lu
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Longer than 1.9 μm photoluminescence emission from InAs quantum structure on GaAs (001) substrate 期刊论文
Applied Physics Letters, 2015, 卷号: 107, 期号: 4, 页码: 041103
Authors:  Ke Liu;  Wenquan Ma;  Jianliang Huang;  Yanhua Zhang;  Yulian Cao;  Wenjun Huang;  Shuai Luo;  Tao Yang
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Narrow-band Type II Superlattice Photodetector with Detection Wavelength Shorter than 2 um 期刊论文
IEEE Photonics Technology Letters, 2015, 卷号: 27, 期号: 21, 页码: 2276-2279
Authors:  Jianliang Huang;  Wenquan Ma;  Yanhua Zhang;  Yulian Cao;  Ke Liu;  Wenjun Huang;  Shulong Lu
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Experimental determination of band overlap in type II InAs/GaSb superlattice based on temperature dependent photoluminescence signal 期刊论文
Solid State Communications, 2015, 卷号: 224, 页码: 34-36
Authors:  Jianliang Huang;  Wenquan Ma;  Yanhua Zhang;  Yulian Cao;  Ke Liu;  Wenjun Huang;  Shuai Luo;  Haiming Ji;  Tao Yang
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Electrical properties of the absorber layer for mid, long and very long wavelength detection using type-II InAs/GaSb superlattice structures grown by molecular beam epitaxy 期刊论文
Semiconductor Science and Technology, 2013, 卷号: 28, 期号: 4, 页码: 045004
Authors:  Xiaolu Guo, Wenquan Ma, Jianliang Huang, Yanhua Zhang, Yang Wei, Kai Cui, Yulian Cao and Qiong Li
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Electrical properties of the absorber layer for mid, long and very long wavelength detection using type-II InAs/GaSb superlattice structures grown by molecular beam epitaxy 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2013, 卷号: 28, 期号: 4, 页码: 045004
Authors:  Guo, Xiaolu;  Ma, Wenquan;  Huang, Jianliang;  Zhang, Yanhua;  Wei, Yang;  Cui, Kai;  Cao, Yulian;  Li, Qiong
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