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Long wavelength type II InAs/GaSb superlattice photodetector using resonant tunneling diode structure 期刊论文
IEEE Electron Device Letters, 2019, 卷号: 41, 期号: 1, 页码: 73-75
Authors:  Biying Nie;   Jianliang Huang;   Chengcheng Zhao;   Yanhua Zhang;   Wenquan Ma
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InAs/GaSb superlattice resonant tunneling diode photodetector with InAs/AlSb double barrier structure 期刊论文
Applied Physics Letters, 2019, 卷号: 114, 页码: 053509
Authors:  Biying Nie;   Jianliang Huang;   Chengcheng Zhao;   Wenjun Huang;   Yanhua Zhang;   Yulian Cao;   Wenquan Ma
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Short/Mid-Wave Two-Band Type-II Superlattice Infrared Heterojunction Phototransistor 期刊论文
IEEE PHOTONICS TECHNOLOGY LETTERS, 2019, 卷号: 31, 期号: 2, 页码: 137-140
Authors:  Wenjun Huang;   Jianliang Huang;   Yanhua Zhang;   Chengcheng Zhao;   Biying Nie;   Yulian Cao ;   Wenquan Ma
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Multiphoton absorption in type-II InAs/GaSb superlattice structure 期刊论文
Optics Letters, 2019, 卷号: 45, 期号: 1, 页码: 165-168
Authors:  Chengcheng Zhao;   Jianliang Huang;   Biying Nie;   Jinchuan Zhang;   Yanhua Zhang;   Wenquan Ma
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Two-Color niBin Type II Superlattice Infrared Photodetector With External Quantum Efficiency Larger Than 100% 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2017, 卷号: 38, 页码: 1266-1269
Authors:  Jianliang Huang;  Wenquan Ma;  Yanhua Zhang;  Yulian Cao;  Wenjun Huang;  Chengcheng Zhao
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Electron mobility of inverted InAs/GaSb quantum well structure 期刊论文
Solid State Communications, 2017, 卷号: 267, 页码: 29-32
Authors:  Wenjun Huang;  Wenquan Ma;  Jianliang Huang;  Yanhua Zhang;  Yulian Cao;  Chengcheng Zhao;  Xiaolu Guo
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Mid-wavelength type II InAs/GaSb superlattice infrared focal plane arrays 期刊论文
Infrared Physics and Technology, 2016, 卷号: 78, 页码: 263-267
Authors:  Xuchang Zhou;  Dongsheng Li;  Jianliang Huang;  Yanhua Zhang;  Yingchun Mu;  Wenquan Ma;  Xiaoying Tie;  Dafan Zuo
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Pushing Detection Wavelength Toward 1 μm by Type II InAs/GaAsSb Superlattices With AlSb Insertion Layers 期刊论文
IEEE Electron Device Letters, 2016, 卷号: 37, 期号: 9, 页码: 1166 - 1169
Authors:  Yanhua Zhang;  Wenquan Ma;  Jianliang Huang;  Yulian Cao;  Ke Liu;  Wenjun Huang;  Chengcheng Zhao;  Haiming Ji;  Tao Yang
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Impact of band structure of Ohmic contact layers on the response feature of p-i-n very long wavelength type II InAs/GaSb superlattice photodetector 期刊论文
Applied Physics Letters, 2015, 卷号: 106, 期号: 26, 页码: 1-5
Authors:  Jianliang Huang;  Wenquan Ma;  Yanhua Zhang;  Yulian Cao;  Ke Liu;  Wenjun Huang;  Shulong Lu
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Longer than 1.9 μm photoluminescence emission from InAs quantum structure on GaAs (001) substrate 期刊论文
Applied Physics Letters, 2015, 卷号: 107, 期号: 4, 页码: 041103
Authors:  Ke Liu;  Wenquan Ma;  Jianliang Huang;  Yanhua Zhang;  Yulian Cao;  Wenjun Huang;  Shuai Luo;  Tao Yang
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