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Photoexcitation-induced carrier dynamics in an undoped InAs/GaSb quantum well 期刊论文
Journal of Physics D: Applied Physics, 2016, 卷号: 49, 页码: 145303
Authors:  Junbin Li;  Xiaoguang Wu;  Guowei Wang;  Yingqiang Xu;  Zhichuan Niu;  Xinhui Zhang
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Photoexcitation-induced carrier dynamics in an undoped InAs/GaSb quantum well 期刊论文
Journal of Physics D: Applied Physics, 2016, 卷号: 49, 期号: 14, 页码: 145303
Authors:  Junbin Li;  Xiaoguang Wu;  Guowei Wang;  Yingqiang Xu;  Zhichuan Niu;  Xinhui Zhang
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Understanding droop effect by analysis on carrier density dependence in InGaN/GaN multiple-quantum-well light-emitting diodes 期刊论文
Superlattices and Microstructures, 2016, 卷号: 96, 页码: 220-225
Authors:  Wei Liu;  Degang Zhao;  Desheng Jiang;  Ping Chen;  Zongshun Liu;  Jianjun Zhu;  Jing Yang;  Xiaoguang He;  Xiaojing Li;  Xiang Li;  Feng Liang;  Jianping Liu;  Liqun Zhang;  Hui Yang;  Yuantao Zhang;  Guotong Du
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Characterization of background carriers in InAs/GaSb quantum well 期刊论文
Journal of Applied Physics, 2016, 卷号: 119, 期号: 9, 页码: 095710
Authors:  Junbin Li;  Xiaoguang Wu;  Guowei Wang;  Yingqiang Xu;  Zhichuan Niu;  Xinhui Zhang
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Comparative study of the differential resistance of GaAs- and GaN-based laser diodes 期刊论文
Journal of Vacuum Science & Technology B, 2016, 卷号: 34, 期号: 4, 页码: 041211
Authors:  Xiang Li;  Zongshun Liu;  Degang Zhao;  Desheng Jiang;  Ping Chen;  Jianjun Zhu;  Jing Yang;  Lingcong Le;  Wei Liu;  Xiaoguang He;  Xiaojing Li;  Feng Liang
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Effect of GaN buffer polarization on electron distribution of AlGaN/GaN heterostructure 期刊论文
Journal of Alloys and Compounds, 2016, 卷号: 670, 页码: 258-261
Authors:  Xiaoguang He;  Degang Zhao;  Wei Liu;  Jing Yang;  Xiaojing Li;  Xiang Li
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Influence of residual carbon impurities in i-GaN layer on the performance of GaN-based p-i-n photodetectors 期刊论文
Journal of Vacuum Science & Technology B, 2016, 卷号: 34, 期号: 1, 页码: 011204
Authors:  Xiaojing Li;  Degang Zhao;  Desheng Jiang;  Ping Chen;  Jianjun Zhu;  Zongshun Liu;  Lingcong Le;  Jing Yang;  Xiaoguang He;  Liqun Zhang;  Shuming Zhang;  Jianping Liu;  Hui Yang
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Utilization of polarization-inverted AlInGaN or relatively thinner AlGaN electron blocking layer in InGaN-based blue–violet laser diodes 期刊论文
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2015, 卷号: 33, 期号: 1, 页码: 011209
Authors:  Lingcong Le;  Degang Zhao;  Desheng Jiang;  Ping Chen;  Zongshun Liu;  Jianjun Zhu;  Jing Yang;  Xiaojing Li;  Xiaoguang He;  Jianping Liu;  Shuming Zhang;  Hui Yang
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Influence of hydrogen impurities on p-type resistivity in Mg-doped GaN films 期刊论文
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2015, 卷号: 33, 期号: 2, 页码: 021505
Authors:  Jing Yang;  Degang Zhao;  Desheng Jiang;  Ping Chen;  Jianjun Zhu;  Zongshun Liu;  Lingcong Le;  Xiaoguang He;  Xiaojing Li
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Unusual and Tunable One-Photon Nonlinearity in Gold-Dye Plexcitonic Fano Systems 期刊论文
Nano Letters, 2015, 卷号: 15, 期号: 4, 页码: 2705-2710
Authors:  Fan Nan;  Ya-Fang Zhang;  Xiaoguang Li;  Xiao-Tian Zhang;  Hang Li;  Xinhui Zhang;  Ruibin Jiang;  Jianfang Wang;  Wei Zhang;  Li Zhou;  Jia-Hong Wang;  Qu-Quan Wang;  Zhenyu Zhang
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