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Dimension Engineering of High-Quality InAs Nanostructures on a Wafer Scale 期刊论文
Nano Letters, 2019, 卷号: 19, 期号: 3, 页码: 1632−1642
Authors:  Dong Pan;   Ji-Yin Wang;   Wei Zhang;   Lujun Zhu;   Xiaojun Su;   Furong Fan;   Yuhao Fu;   Shaoyun Huang;   Dahai Wei;   Lijun Zhang;   Manling Sui;   Arkady Yartsev;   Hongqi Xu;   Jianhua Zhao
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Gate defined quantum dot realized in a single crystalline InSb nanosheet 期刊论文
Applied Physics Letters, 2019, 卷号: 114, 页码: 023108
Authors:  Jianhong Xue;  Yuanjie Chen;  Dong Pan;  Ji-Yin Wang;  Jianhua Zhao;  Shaoyun Huang;  H. Q. Xu
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Anisotropic Pauli Spin-Blockade Effect and Spin−Orbit Interaction Field in an InAs Nanowire Double Quantum Dot 期刊论文
Nano Letters, 2018, 卷号: 18, 期号: 8, 页码: 4741-4747
Authors:  Ji-Yin Wang;  Guang-Yao Huang;  Shaoyun Huang;  Jianhong Xue;  Dong Pan;  Jianhua Zhao;  Hongqi Xu
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Coherent Transport in a Linear Triple Quantum Dot Made from a Pure-Phase InAs Nanowire 期刊论文
Nano Lett., 2017, 卷号: 17, 页码: 4158−4164
Authors:  Ji-Yin Wang;  Shaoyun Huang;  Guang-Yao Huang;  Dong Pan;  Jianhua Zhao;  H. Q. Xu
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Schottky barrier heights at the interfaces between pure-phase InAs nanowires and metal contacts 期刊论文
Journal of Applied Physics, 2016, 卷号: 119, 期号: 5, 页码: 054304
Authors:  Boyong Feng;  Shaoyun Huang;  Jiyin Wang;  Dong Pan;  Jianghua Zhao;  H. Q. Xu
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Measurements of the spin-orbit interaction and Landé g factor in a pure-phase InAs nanowire double quantum dot in the Pauli spin-blockade regime 期刊论文
Applied Physics Letters, 2016, 卷号: 109, 页码: 053106
Authors:  Jiyin Wang;  Shaoyun Huang;  Zijin Lei;  Dong Pan;  Jianhua Zhao;  H. Q. Xu
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Synthesis, properties, and top-gated metal–oxide–semiconductor field-effect transistors of p-type GaSb nanowires 期刊论文
RSC Advances, 2013, 期号: 43, 页码: 19834-19839
Authors:  Guangwei Xu, Shaoyun Huang, Xiaoye Wang, Bin Yu, Hui Zhang, Tao Yang, H. Q. Xu and Lun Dai
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