Knowledge Management System Of Institute of Semiconductors,CAS
Gate defined quantum dot realized in a single crystalline InSb nanosheet | |
Jianhong Xue; Yuanjie Chen; Dong Pan; Ji-Yin Wang; Jianhua Zhao; Shaoyun Huang; H. Q. Xu | |
2019 | |
Source Publication | Applied Physics Letters
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Volume | 114Pages:023108 |
Indexed By | SCI |
Language | 英语 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/29619 |
Collection | 半导体超晶格国家重点实验室 |
Recommended Citation GB/T 7714 | Jianhong Xue;Yuanjie Chen;Dong Pan;Ji-Yin Wang;Jianhua Zhao;Shaoyun Huang;H. Q. Xu. Gate defined quantum dot realized in a single crystalline InSb nanosheet[J]. Applied Physics Letters,2019,114:023108. |
APA | Jianhong Xue;Yuanjie Chen;Dong Pan;Ji-Yin Wang;Jianhua Zhao;Shaoyun Huang;H. Q. Xu.(2019).Gate defined quantum dot realized in a single crystalline InSb nanosheet.Applied Physics Letters,114,023108. |
MLA | Jianhong Xue;Yuanjie Chen;Dong Pan;Ji-Yin Wang;Jianhua Zhao;Shaoyun Huang;H. Q. Xu."Gate defined quantum dot realized in a single crystalline InSb nanosheet".Applied Physics Letters 114(2019):023108. |
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13 Gate defined quan(1581KB) | 期刊论文 | 作者接受稿 | 限制开放 | CC BY-NC-SA | Application Full Text |
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