Gate defined quantum dot realized in a single crystalline InSb nanosheet

	Gate defined quantum dot realized in a single crystalline InSb nanosheet
	Jianhong Xue; Yuanjie Chen; Dong Pan; Ji-Yin Wang; Jianhua Zhao; Shaoyun Huang; H. Q. Xu
	2019
Source Publication	Applied Physics Letters
Volume	114 Pages:023108
Indexed By	SCI
Language	英语
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/29619
Collection	半导体超晶格国家重点实验室
Recommended Citation GB/T 7714	Jianhong Xue;Yuanjie Chen;Dong Pan;Ji-Yin Wang;Jianhua Zhao;Shaoyun Huang;H. Q. Xu. Gate defined quantum dot realized in a single crystalline InSb nanosheet[J]. Applied Physics Letters,2019,114:023108.
APA	Jianhong Xue;Yuanjie Chen;Dong Pan;Ji-Yin Wang;Jianhua Zhao;Shaoyun Huang;H. Q. Xu.(2019).Gate defined quantum dot realized in a single crystalline InSb nanosheet.Applied Physics Letters,114,023108.
MLA	Jianhong Xue;Yuanjie Chen;Dong Pan;Ji-Yin Wang;Jianhua Zhao;Shaoyun Huang;H. Q. Xu."Gate defined quantum dot realized in a single crystalline InSb nanosheet".Applied Physics Letters 114(2019):023108.

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