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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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中国科学院半导体研究... [7]
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光电子研究发展中心 [1]
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王博 [4]
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A Dry Electrode Cap and Its Application in a Steady-State Visual Evoked Potential-Based Brain–Computer Interface
期刊论文
Electronics, 2019, 卷号: 8, 期号: 10, 页码: 1080
Authors:
Xiaoting Wu
;
Li Zheng
;
Lu Jiang
;
Xiaoshan Huang
;
Yuanyuan Liu
;
Lihua Xing
;
Xiao Xing
;
Yijun Wang
;
Weihua Pei
;
Xiaowei Yang
;
Zhiduo Liu
;
Chunrong Wei
;
Yamin Li
;
Miao Yuan
;
Hongda Chen
Adobe PDF(3221Kb)
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View/Download:36/0
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Submit date:2020/08/04
Tunable Schottky barrier width and enormously enhanced photo- responsivity in Sb doped SnS 2 monolayer
期刊论文
Nano Research, 2019, 卷号: 12, 期号: 2, 页码: 463-468
Authors:
Junchi Liu
;
Xiao Liu
;
Zhuojun Chen
;
Lili Miao
;
Xingqiang Liu
;
Bo Li
;
Liming Tang
;
Keqiu Chen
;
Yuan Liu
;
Jingbo Li
;
Zhongming Wei
;
Xidong Duan
Adobe PDF(3370Kb)
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View/Download:21/0
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Submit date:2020/07/30
Influence of deep level defects on electrical compensation in semi-insulating InP materials
期刊论文
ACTA PHYSICA SINICA, 2007, 卷号: 56, 期号: 2, 页码: 1167-1171
Authors:
Yang, J (Yang Jun)
;
Zhao, YW (Zhao You-Wen)
;
Dong, ZY (Dong Zhi-Yuan)
;
Deng, AH (Deng Ai-Hong)
;
Miao, SS (Miao Shan-Shan)
;
Wang, B (Wang Bo)
;
Zhao, YW, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: zhaoyw@red.semi.ac.cn
Adobe PDF(177Kb)
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Submit date:2010/03/29
Inp
Thermally induced Fe atom transition from substitutional to interstitial sites in InP and its influence on material property
期刊论文
ACTA PHYSICA SINICA, 2007, 卷号: 56, 期号: 9, 页码: 5536-5541
Authors:
Zhao, YW (Zhao You-Wen)
;
Miao, SS (Miao Shan-Shan)
;
Dong, ZY (Dong Zhi-Yuan)
;
Lue, XH (Lue Xiao-Hong)
;
Deng, AH (Deng Ai-Hong)
;
Yang, J (Yang Jun)
;
Wang, B (Wang Bo)
;
Zhao, YW, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(191Kb)
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View/Download:870/248
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Submit date:2010/03/29
Indium Phosphide
Electron irradiation induced defects in high temperature annealed InP single crystal
期刊论文
ACTA PHYSICA SINICA, 2007, 卷号: 56, 期号: 3, 页码: 1603-1607
Authors:
Wang B (Wang Bo)
;
Zhao YW (Zhao You-Wen)
;
Dong ZY (Dong Zhi-Yuan)
;
Deng AH (Deng Ai-Hong)
;
Miao SS (Miao Shan-Shan)
;
Yang J (Yang Jun)
;
Zhao, YW, Sichuan Univ, Coll Phys Sci & Technol, Dept Appl Phys, Chengdu 610065, Peoples R China. 电子邮箱地址: zhaoyw@red.semi.ac.cn
Adobe PDF(167Kb)
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View/Download:795/234
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Submit date:2010/03/29
Inp
高温退火后非掺杂磷化铟材料的电子辐照缺陷
期刊论文
物理学报, 2007, 卷号: 56, 期号: 3, 页码: 1603-1607
Authors:
王博
;
赵有文
;
董志远
;
邓爱红
;
苗杉杉
;
杨俊
Adobe PDF(354Kb)
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View/Download:822/197
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Submit date:2010/11/23
深能级缺陷对半绝缘InP材料电学补偿的影响
期刊论文
物理学报, 2007, 卷号: 56, 期号: 2, 页码: 1167-1171
Authors:
杨俊
;
赵有文
;
董志远
;
邓爱红
;
苗杉杉
;
王博
Adobe PDF(353Kb)
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View/Download:821/306
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Submit date:2010/11/23
磷化铟中铁原子替位与填隙的热致转变及其对材料性质的影响
期刊论文
物理学报, 2007, 卷号: 56, 期号: 9, 页码: 5536-5541
Authors:
赵有文
;
苗杉杉
;
董志远
;
吕小红
;
邓爱红
;
杨俊
;
王博
Adobe PDF(393Kb)
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View/Download:860/252
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Submit date:2010/11/23
半绝缘InP的铁掺杂激活与电学补偿
期刊论文
半导体学报, 2006, 卷号: 27, 期号: 11, 页码: 1934-1939
Authors:
苗杉杉
;
赵有文
;
董志远
;
邓爱红
;
杨俊
;
王博
Adobe PDF(486Kb)
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View/Download:889/367
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Submit date:2010/11/23