SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Influence of deep level defects on electrical compensation in semi-insulating InP materials
Yang, J (Yang Jun); Zhao, YW (Zhao You-Wen); Dong, ZY (Dong Zhi-Yuan); Deng, AH (Deng Ai-Hong); Miao, SS (Miao Shan-Shan); Wang, B (Wang Bo); Zhao, YW, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: zhaoyw@red.semi.ac.cn
2007
Source PublicationACTA PHYSICA SINICA
ISSNISSN: 1000-3290
Volume56Issue:2Pages:1167-1171
AbstractIn this paper, we analyze and compare electrical compensation and deep level defects in semi-insulating ( SI) materials prepared by Fe-doping and high temperature annealing of undoped InP. Influence of deep level defects in the SI-InP materials on the electrical compensation has been studied thermally stimulated current spectroscopy (TSC). Electrical property of the Fe-doped SI-InP is deteriorated due to involvement of a high concentration of deep level defects in the compensation. In contrast, the concentration of deep defects is very low in high temperature annealed undoped SI-InP in which Fe acceptors formed by diffusion act as the only compensation centre to pin the Fermi level, resulting in excellent electrical performance. A more comprehensive electrical compensation model of SI-InP has been given based on the research results.
metadata_83chinese acad sci, inst semicond, beijing 100083, peoples r china; sichuan univ, dept appl phys, chengdu 610065, peoples r china
KeywordInp
Subject Area半导体物理
Indexed BySCI
Language中文
Date Available2010-03-29
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/9682
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorZhao, YW, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: zhaoyw@red.semi.ac.cn
Recommended Citation
GB/T 7714
Yang, J ,Zhao, YW ,Dong, ZY ,et al. Influence of deep level defects on electrical compensation in semi-insulating InP materials[J]. ACTA PHYSICA SINICA,2007,56(2):1167-1171.
APA Yang, J .,Zhao, YW .,Dong, ZY .,Deng, AH .,Miao, SS .,...&Zhao, YW, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: zhaoyw@red.semi.ac.cn.(2007).Influence of deep level defects on electrical compensation in semi-insulating InP materials.ACTA PHYSICA SINICA,56(2),1167-1171.
MLA Yang, J ,et al."Influence of deep level defects on electrical compensation in semi-insulating InP materials".ACTA PHYSICA SINICA 56.2(2007):1167-1171.
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