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二维系统中的演生规范场效应 学位论文
, 北京: 中国科学院大学, 2018
Authors:  李运美
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演生规范场效应  激子  赝磁场  拓扑  磁振子  界面态  
锗硅电光调制器研究 学位论文
, 北京: 中国科学院研究生院, 2014
Authors:  李亚明
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Direct-bandgap electroluminescence from a horizontal Ge p-i-n ridge waveguide on Si(001) substrate 期刊论文
APPLIED PHYSICS LETTERS, 2014, 卷号: 104, 期号: 19, 页码: 191111
Authors:  Liu, Z;  Li, YM;  He, C;  Li, CB;  Xue, CL;  Zuo, YH;  Cheng, BW;  Wang, QM
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GeSi modulator based on two-mode interference 期刊论文
APPLIED OPTICS, 2014, 卷号: 53, 期号: 2, 页码: 221-225
Authors:  Li, YM;  Cheng, BW
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Compact two-mode multiplexer based on symmetric Y-junction and Multimode interference waveguides 期刊论文
OPTICS EXPRESS, 2014, 卷号: 22, 期号: 5, 页码: 5781-5786
Authors:  Li, YM;  Li, C;  Li, CB;  Cheng, BW;  Xue, CL
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Control carrier recombination of multi-scale textured black silicon surface for high performance solar cells 期刊论文
APPLIED PHYSICS LETTERS, 2014, 卷号: 104, 期号: 25, 页码: 253902
Authors:  Hong, M;  Yuan, GD;  Peng, Y;  Li, JM;  Chen, HY;  Zhang, Y;  Liu, ZQ;  Wang, JX;  Cai, B;  Zhu, YM;  Chen, Y;  Liu, JH
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Enhanced performance of solar cells with optimized surface recombination and efficient photon capturing via anisotropic-etching of black silicon 期刊论文
APPLIED PHYSICS LETTERS, 2014, 卷号: 104, 期号: 19, 页码: 193904
Authors:  Chen, HY;  Yuan, GD;  Peng, Y;  Hong, M;  Zhang, YB;  Zhang, Y;  Liu, ZQ;  Wang, JX;  Cai, B;  Zhu, YM;  Li, JM
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design of electro-absorption modulator with tapered mode coupler on the GeSi layer 期刊论文
Journal of Optics, 2013, 卷号: 15, 期号: 8, 页码: 085501
Authors:  Ym Li and Bw Cheng
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Room temperature direct-bandgap electroluminescence from n-type strain-compensated Ge/SiGe multiple quantum wells 期刊论文
APPLIED PHYSICS LETTERS, 2012, 卷号: 101, 期号: 23, 页码: 231108
Authors:  Liu Z (Liu, Zhi);  Hu WX (Hu, Weixuan);  Li C (Li, Chong);  Li YM (Li, Yaming);  Xue CL (Xue, Chunlai);  Li CB (Li, Chuanbo);  Zuo YH (Zuo, Yuhua);  Cheng BW (Cheng, Buwen);  Wang QM (Wang, Qiming)
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Light-emitting-diodes  Ge  Si  Silicon  Gain  Gap  
Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes 期刊论文
APPLIED PHYSICS LETTERS, 2012, 卷号: 101, 期号: 25, 页码: 252110
Authors:  Le LC (Le, L. C.);  Zhao DG (Zhao, D. G.);  Jiang DS (Jiang, D. S.);  Zhang SM (Zhang, S. M.);  Yang H (Yang, H.);  Li L (Li, L.);  Wu LL (Wu, L. L.);  Chen P (Chen, P.);  Liu ZS (Liu, Z. S.);  Li ZC (Li, Z. C.);  Fan YM (Fan, Y. M.);  Zhu JJ (Zhu, J. J.);  Wang H (Wang, H.)
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