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Composition-dependent Raman modes of Mo1-xWxS2 monolayer alloys 期刊论文
NANOSCALE, 2014, 卷号: 6, 期号: 5, 页码: 2833-2839
Authors:  Chen, YF;  Dumcenco, DO;  Zhu, YM;  Zhang, X;  Mao, NN;  Feng, QL;  Zhang, M;  Zhang, J;  Tan, PH;  Huang, YS;  Xie, LM
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Control carrier recombination of multi-scale textured black silicon surface for high performance solar cells 期刊论文
APPLIED PHYSICS LETTERS, 2014, 卷号: 104, 期号: 25, 页码: 253902
Authors:  Hong, M;  Yuan, GD;  Peng, Y;  Li, JM;  Chen, HY;  Zhang, Y;  Liu, ZQ;  Wang, JX;  Cai, B;  Zhu, YM;  Chen, Y;  Liu, JH
Adobe PDF(1385Kb)  |  Favorite  |  View/Download:436/71  |  Submit date:2015/04/02
Enhanced performance of solar cells with optimized surface recombination and efficient photon capturing via anisotropic-etching of black silicon 期刊论文
APPLIED PHYSICS LETTERS, 2014, 卷号: 104, 期号: 19, 页码: 193904
Authors:  Chen, HY;  Yuan, GD;  Peng, Y;  Hong, M;  Zhang, YB;  Zhang, Y;  Liu, ZQ;  Wang, JX;  Cai, B;  Zhu, YM;  Li, JM
Adobe PDF(1370Kb)  |  Favorite  |  View/Download:493/94  |  Submit date:2015/04/02
Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes 期刊论文
APPLIED PHYSICS LETTERS, 2012, 卷号: 101, 期号: 25, 页码: 252110
Authors:  Le LC (Le, L. C.);  Zhao DG (Zhao, D. G.);  Jiang DS (Jiang, D. S.);  Zhang SM (Zhang, S. M.);  Yang H (Yang, H.);  Li L (Li, L.);  Wu LL (Wu, L. L.);  Chen P (Chen, P.);  Liu ZS (Liu, Z. S.);  Li ZC (Li, Z. C.);  Fan YM (Fan, Y. M.);  Zhu JJ (Zhu, J. J.);  Wang H (Wang, H.)
Adobe PDF(1055Kb)  |  Favorite  |  View/Download:1103/354  |  Submit date:2013/03/20
Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown under an indium-very-rich condition by metalorganic chemical vapor deposition (MOCVD) 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2012, 卷号: 348, 期号: 1, 页码: 25-30
Authors:  Zhu, JJ;  Fan, YM;  Zhang, H;  Lu, GJ;  Wang, H;  Zhao, DG;  Jiang, DS;  Liu, ZS;  Zhang, SM;  Chen, GF;  Zhang, BS;  Yang, H
Adobe PDF(671Kb)  |  Favorite  |  View/Download:1128/369  |  Submit date:2013/02/27
Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy 期刊论文
NANOSCALE RESEARCH LETTERS, 2010, 卷号: 5, 期号: 8, 页码: 1340-1343
Authors:  Liu JM (Liu J. M.);  Liu XL (Liu X. L.);  Xu XQ (Xu X. Q.);  Wang J (Wang J.);  Li CM (Li C. M.);  Wei HY (Wei H. Y.);  Yang SY (Yang S. Y.);  Zhu QS (Zhu Q. S.);  Fan YM (Fan Y. M.);  Zhang XW (Zhang X. W.);  Wang ZG (Wang Z. G.)
Adobe PDF(278Kb)  |  Favorite  |  View/Download:1234/348  |  Submit date:2010/08/17
Valence Band Offset  W-inn/h-bn Heterojunction  X-ray Photoelectron Spectroscopy  Conduction Band Offset  Valence Band Offset  Negative Electron-affinity  Indium Nitride  Wurtzite Gan  Surface  Film  Aln  Transport  Emission  Naxwo3  Growth  
The effect of dopant Si on the uniformity of self-organized InAs quantum dots 期刊论文
JOURNAL OF INFRARED AND MILLIMETER WAVES, 1999, 卷号: 18, 期号: 6, 页码: 423-426
Authors:  Wang HL;  Zhu HJ;  Li Q;  Ning D;  Wang H;  Wang XD;  Deng YM;  Feng SL;  Wang HL,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,Beijing 100083,Peoples R China.
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Self-organized Quantum Dots  Pl  Si-doping  Inas/gaas  
Si doping effect on self-organized InAs/GaAs quantum dots 期刊论文
JOURNAL OF CRYSTAL GROWTH, 1999, 卷号: 200, 期号: 3-4, 页码: 603-607
Authors:  Zhao Q;  Feng SL;  Ning D;  Zhu HJ;  Wang ZM;  Deng YM;  Feng SL,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(214Kb)  |  Favorite  |  View/Download:1187/526  |  Submit date:2010/08/12
Self-organized Quantum Dots  Inas/gaas  Scanning Probe Microscopy  Inas  Doping Effect  Growth  Atomic-force Microscope  Gaas  Gaas(001)  Islands  
Current self-oscillation induced by a transverse magnetic field in a doped GaAs/AlAs superlattice 期刊论文
PHYSICAL REVIEW B, 1999, 卷号: 60, 期号: 12, 页码: 8866-8870
Authors:  Sun BQ;  Wang JN;  Ge WK;  Wang YQ;  Jiang DS;  Zhu HJ;  Wang HL;  Deng YM;  Feng SL;  Wang JN,Hong Kong Univ Sci & Technol,Dept Phys,Hong Kong,Peoples R China.
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Semiconductor Superlattices  Domains  Model  
Strain effect on the band structure of InAs/GaAs quantum dots 期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 卷号: 38, 期号: 11, 页码: 6264-6265
Authors:  Zhu HJ;  Feng SL;  Jiang DS;  Deng YM;  Wang HL;  Zhu HJ,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(62Kb)  |  Favorite  |  View/Download:1830/857  |  Submit date:2010/08/12
Inas/gaas  Quantum Dots  Photoluminescence  Band Structure  Gaas  Relaxation  Temperature