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Fabrication of GaN-based ridge waveguides with very smooth and vertical sidewalls by combined plasma dry etching and wet chemical etching 期刊论文
Physica Status Solidi A, 2015, 卷号: 212, 期号: 10, 页码: 2341–2344
Authors:  Wanyong Li;  Yi Luo;  Bing Xiong;  Changzheng Sun;  Lai Wang;  Jian Wang;  Yanjun Han;  Jianchang Yan;  Tongbo Wei;  Hongxi Lu
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Phosphor-free InGaN micro-pyramid white light emitting diodes with multilayer graphene electrode 期刊论文
RSC Advances, 2015, 卷号: 5, 页码: 100646–100650
Authors:  Binglei Fu;  Yan Cheng;  Zhao Si;  Tongbo Wei;  Xionghui Zeng;  Guodong Yuan;  Zhiqiang Liu;  Hongxi Lu;  Xiaoyan Yi;  Jinmin Li;  Junxi Wang
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Modification of Carrier Distribution in Dual-Wavelength Light-Emitting Diodes by Specified Mg Doped Barrier 期刊论文
ECS Solid State Lett., 2013, 卷号: 2, 期号: 10, 页码: R37-R39
Authors:  Zhao Si, Tongbo Wei, Jun Ma, Jianchang Yan, Xuecheng Wei, Hongxi Lu, Binglei Fu, Shaoxin Zhu, Zhe Liu, Junxi Wang and Jinmin Li
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Improved hole distribution in InGaN-GaN dual-wavelength light-emitting diodes with Mg-doped quantum-wells 期刊论文
physica status solidi (a), 2013, 卷号: 210, 期号: 3, 页码: 559-562
Authors:  Zhao Si, Tongbo Wei, Jianchang Yan, Jun Ma, Ning Zhang, Zhe Liu, Xuecheng Wei, Xiaodong Wang, Hongxi Lu, Junxi Wang, Jinmin Li
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Phosphor-free nanopyramid white light-emitting diodes grown on { 10 1 ¯ 1 } planes using nanospherical-lens photolithography 期刊论文
APPLIED PHYSICS LETTERS, 2013, 卷号: 103, 页码: 241107
Authors:  Kui Wu, Tongbo Wei, Ding Lan, Xuecheng Wei, Haiyang Zheng, Yu Chen, Hongxi Lu, Kai Huang, Junxi Wang, Yi Luo, Jinmin Li
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Anomalous temperature dependence of photoluminescence in self-assembled InGaN quantum dots 期刊论文
APPLIED PHYSICS LETTERS, 2012, 卷号: 101, 期号: 13, 页码: 131101
Authors:  Ma J (Ma, Jun);  Ji XL (Ji, Xiaoli);  Wang GH (Wang, Guohong);  Wei XC (Wei, Xuecheng);  Lu HX (Lu, Hongxi);  Yi XY (Yi, Xiaoyan);  Duan RF (Duan, Ruifei);  Wang JX (Wang, Junxi);  Zeng YP (Zeng, Yiping);  Li JM (Li, Jinmin);  Yang FH (Yang, Fuhua);  Wang C (Wang, Chao);  Zou G (Zou, Gang)
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Improvement of the efficiency droop of GaN-LEDs using an AlGaN/GaN superlattice insertion layer 期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 11, 页码: 114006
Authors:  Ji, Panfeng;  Liu, Naixin;  Wei, Tongbo;  Liu, Zhe;  Lu, Hongxi;  Wang, Junxi;  Li, Jinmin;  Ji, P.(jipanfeng@semi.ac.cn)
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Efficiency  Electrostatic Devices  Electrostatic Discharge  Superlattices  Voltage Control  
Influence of growth conditions on the V-defects in InGaN/GaN MQWs 期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 10, 页码: 103001
Authors:  Ji, Panfeng;  Liu, Naixin;  Wei, Xuecheng;  Liu, Zhe;  Lu, Hongxi;  Wang, Junxi;  Li, Jinmin;  Ji, P.(jipanfeng@semi.ac.cn)
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Gallium Nitride  Growth Temperature  Semiconductor Quantum Wells  Surface Defects  
Catalytic Activation of Mg-Doped GaN by Hydrogen Desorption Using Different Metal Thin Layers 期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 49, 期号: 10, 页码: Art. No. 100201
Authors:  Wei TB (Wei Tongbo);  Wang JX (Wang Junxi);  Liu NX (Liu Naixin);  Lu HX (Lu Hongxi);  Zeng YP (Zeng Yiping);  Wang GH (Wang Guohong);  Li JM (Li Jinmin);  Wei, TB, Chinese AcadSci, InstSemicond, Semicond Lighting Technol Res &DevCtr, Beijing 100083, Peoples R China. 电子邮箱地址: tbwei@semi.ac.cn
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Low-temperature Activation  Films  
一种氮化镓系发光二极管 专利
专利类型: 发明, 专利号: CN201010235850.1, 公开日期: 2011-08-31
Inventors:  马平;  王军喜;  刘乃鑫;  路红喜;  王国宏;  曾一平;  李晋闽
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