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不同淀积厚度InAs量子点的喇曼散射 期刊论文
半导体学报, 2006, 卷号: 27, 期号: 6, 页码: 1012-1015
Authors:  张冠杰;  徐波;  陈涌海;  姚江宏;  林耀望;  舒永春;  皮彪;  邢晓东;  刘如彬;  舒强;  王占国;  许京军
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MBE Growth of High Electron Mobility InP Epilayers 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 8, 页码: 1485-1488
Authors:  Su Yongchun;  Yao Jianghong;  Lin Yaowang;  Xing Xiaodong;  Pi Biao;  Xu Bo;  Wang Zhanguo;  Xu Jingjun
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3μm GaInNAs/GasAs Quantum Well Resonant Cavity Enhanced Photodetector 期刊论文
光子学报, 2002, 卷号: 31, 期号: 3, 页码: 303-307
Authors:  Zhang Ruikang;  Zhong Yuan;  Xu Yingqiang;  Zhang Wei;  Du Yun;  Huang Yongqing;  Ren Xiaomin;  Pan Zhang;  Lin Yaowang
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离子损伤对等离子体辅助分子束外延生长的 Ga NAs/ Ga As和Ga In NAs/ Ga As量子阱的影响(英文) 期刊论文
半导体学报, 2001, 卷号: 22, 期号: 1, 页码: 31
Authors:  李联合;  潘钟;  张伟;  林耀望;  王学宇;  吴荣汉
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分子束外延生长高应变单量子阱激光器(英文) 期刊论文
半导体学报, 2001, 卷号: 22, 期号: 9, 页码: 1097
Authors:  潘钟;  李联合;  徐应强;  杜云;  林耀望
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GaN_xAs_(1-x)/GaAs单量子阱发光性质及带阶研究 期刊论文
红外与毫米波学报, 2001, 卷号: 20, 期号: 1, 页码: 25
Authors:  罗向东;  徐仲英;  潘钟;  李联合;  林耀望;  葛维琨
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Effects of Rapid Thermal Annealing on OpticalProperties of GaInNAs/ GaAs Single Quantum Well Grown by Plasma- Assisted Molecular Beam Epitaxy 期刊论文
半导体学报, 2000, 卷号: 21, 期号: 10, 页码: 974
Authors:  Zhang W(张伟);  Pan Z(潘钟);  Li LH(李联合);  Wang XY(王学宇);  Lin YW(林耀望)
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Characterization of Ga N_x As_(1 - x) Alloy Grownon Ga As by Molecular Beam Epitaxy 期刊论文
半导体学报, 2000, 卷号: 21, 期号: 3, 页码: 219
Authors:  Li LH(李联合);  Zhang W(张伟);  Pan Z(潘钟);  Lin YW(林耀望);  Wu RH(吴荣汉)
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Effects of Growth Conditions on Optical Properties ofGa In NAs/Ga As Quantum Well Grown by Molecular Beam Epitaxy 期刊论文
半导体学报, 2000, 卷号: 21, 期号: 12, 页码: 1152
Authors:  Li LH(李联合);  Pan Z(潘钟);  Zhang W(张伟);  Lin YW(林耀望);  Wang XY(王学宇);  Wu RH(吴荣汉)
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分子束外延GaN/GaAs立方相异质结构的电子显微分析 期刊论文
半导体学报, 1999, 卷号: 20, 期号: 1, 页码: 58
Authors:  韩培德;  杨海峰;  杨辉;  林耀望;  张泽;  李新峰;  周增圻
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