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量子点场效应晶体管制备工艺与光电特性研究 学位论文
, 北京: 中国科学院研究生院, 2013
Authors:  徐晓娜
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Observation of N-Shaped Negative Differential Resistance in GaAs-Based Modulation-Doped Field Effect Transistor with InAs Quantum Dots 期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 49, 期号: 10, 页码: Art. No. 104002
Authors:  Li YQ (Li Yueqiang);  Wang XD (Wang Xiaodong);  Xu XN (Xu Xiaona);  Liu W (Liu Wen);  Chen YL (Chen Yanling);  Yang FH (Yang Fuhua);  Tan PH (Tan Pingheng);  Zeng YP (Zeng Yiping);  Li, YQ, Chinese AcadSci, InstSemicond, Engn Res CtrSemicond Integrated Technol, Beijing 100083, Peoples R China. 电子邮箱地址: xdwang@semi.ac.cn
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Real-space Transfer  2-dimensional Electron-gas  
ICP干法刻蚀工艺制备剖面为正梯形的台面的方法 专利
专利类型: 发明, 公开日期: 2013-08-21
Inventors:  徐晓娜;  胡传贤;  樊中朝;  王晓东;  杨富华
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利用飞秒激光制备金属-半导体接触电极的方法 专利
专利类型: 发明, 专利号: CN201010283562.3, 公开日期: 2011-08-31
Inventors:  徐晓娜;  李越强;  王晓东;  杨富华
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一种基于自组织量子点的存储器及其制备方法 专利
专利类型: 发明, 专利号: CN102136492A, 公开日期: 2012-09-07, 2011-07-27, 2012-09-07
Inventors:  李越强;  王晓东;  徐晓娜;  刘雯;  陈燕玲;  杨富华
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